Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5889
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dc.contributorDepartment of Industrial and Systems Engineering-
dc.creatorJelenković, EV-
dc.creatorTo, S-
dc.date.accessioned2014-12-11T08:28:45Z-
dc.date.available2014-12-11T08:28:45Z-
dc.identifier.issn2162-8742 (print)-
dc.identifier.issn2162-8750 (online)-
dc.identifier.urihttp://hdl.handle.net/10397/5889-
dc.language.isoenen_US
dc.publisherThe Electrochemical Societyen_US
dc.rights© The Electrochemical Society, Inc. 2013. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Solid State Letters, 6 Mar. 2013, v. 2, no. 5, p. 42-43.en_US
dc.subjectFilm growthen_US
dc.subjectOxidationen_US
dc.subjectPhotoelectronsen_US
dc.subjectRutheniumen_US
dc.subjectSolid state physicsen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.titlePartial oxidation of thin film ruthenium in MOS structure-chemical, compositional and electrical propertiesen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: Suet Toen_US
dc.identifier.spage42-
dc.identifier.epage43-
dc.identifier.volume2-
dc.identifier.issue5-
dc.identifier.doi10.1149/2.008305ssl-
dcterms.abstractPartially oxidized Ru film in MOS structure is investigated from compositional, chemical and electrical point of view with a purpose of revealing the role of oxygen on flatband voltage. The oxidation causes film roughening and non-uniform RuO₂ growth front. Presence of RuO₂ close to the interface and at the interface is confirmed by X-ray photoelectron spectroscopy and Z-contrast imaging. This is related to flatband voltage shift, equivalent to the work function of RuO₂. Oxidation of Ru increases the interface states density.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationECS Solid state letters, 6 Mar. 2013, v. 2, no. 5, p. 42-43-
dcterms.isPartOfECS Solid state letters-
dcterms.issued2013-03-06-
dc.identifier.isiWOS:000318344300006-
dc.identifier.scopus2-s2.0-84880406280-
dc.identifier.rosgroupidr64091-
dc.description.ros2012-2013 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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