Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/55468
Title: Ultraviolet lasers realized via electrostatic doping method
Authors: Liu, XY
Shan, CX
Zhu, H
Li, BH
Jiang, MM
Yu, SF 
Shen, DZ
Issue Date: 2015
Source: Scientific reports, 1 2015, v. 5, no. , p. 1-9
Abstract: P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.
Publisher: Nature Publishing Group
Journal: Scientific reports 
EISSN: 2045-2322
DOI: 10.1038/srep13641
Rights: This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
The following publication Liu, X. Y. et al. Ultraviolet Lasers Realized via Electrostatic Doping Method. Sci. Rep. 5, 13641 (2015) is available at https://dx.doi.org/10.1038/srep13641
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