Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/55468
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dc.contributorDepartment of Applied Physics-
dc.creatorLiu, XY-
dc.creatorShan, CX-
dc.creatorZhu, H-
dc.creatorLi, BH-
dc.creatorJiang, MM-
dc.creatorYu, SF-
dc.creatorShen, DZ-
dc.date.accessioned2016-09-07T02:21:54Z-
dc.date.available2016-09-07T02:21:54Z-
dc.identifier.urihttp://hdl.handle.net/10397/55468-
dc.language.isoenen_US
dc.publisherNature Publishing Groupen_US
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en_US
dc.rightsThe following publication Liu, X. Y. et al. Ultraviolet Lasers Realized via Electrostatic Doping Method. Sci. Rep. 5, 13641 (2015) is available at https://dx.doi.org/10.1038/srep13641en_US
dc.titleUltraviolet lasers realized via electrostatic doping methoden_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume5-
dc.identifier.doi10.1038/srep13641-
dcterms.abstractP-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationScientific reports, 1 2015, v. 5, no. , p. 1-9-
dcterms.isPartOfScientific reports-
dcterms.issued2015-
dc.identifier.scopus2-s2.0-84940704382-
dc.identifier.eissn2045-2322-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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