Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4885
Title: Epitaxial growth and dielectric properties of Pb₀.₄Sr₀.₆TiO₃ thin films on (00l)-oriented metallic Li₀.₃Ni₀.₇O₂ coated MgO substrates
Authors: Li, XT
Du, PY
Mak, CL 
Wong, KH
Issue Date: 25-Jun-2007
Source: Applied physics letters, 25 June 2007, v. 90, no. 26, 262906, p. 1-3
Abstract: Highly (00l)-oriented Li₀.₃Ni₀.₇O₂thin films have been fabricated on (001) MgO substrates by pulsed laser deposition. The Pb₀.₄Sr₀.₆TiO₃ (PST40) thin film deposited subsequently also shows a significant (00l)-oriented texture. Both the PST40 and Li₀.₃Ni₀.₇O₂have good epitaxial behavior. The epitaxial growth of the PST40 thin film is more perfect with the Li₀.₃Ni₀.₇O₂buffer layer due to the less distortion in the film. The dielectric tunability of the PST40 thin film with Li₀.₃Ni₀.₇O₂buffer layer therefore reaches 70%, which is 75% higher than that without Li₀.₃Ni₀.₇O₂buffer layer, and the dielectric loss of the PST40 thin film is 0.06.
Keywords: Buffer layers
Dielectric losses
Epitaxial growth
Lead compounds
Pulsed laser deposition
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.2752532
Rights: © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. T. Li et al., Appl. Phys. Lett. 90, 262906 (2007) and may be found at http://link.aip.org/link/?apl/90/262906
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