Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4885
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.contributor | Materials Research Centre | - |
dc.creator | Li, XT | - |
dc.creator | Du, PY | - |
dc.creator | Mak, CL | - |
dc.creator | Wong, KH | - |
dc.date.accessioned | 2014-12-11T08:24:50Z | - |
dc.date.available | 2014-12-11T08:24:50Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4885 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. T. Li et al., Appl. Phys. Lett. 90, 262906 (2007) and may be found at http://link.aip.org/link/?apl/90/262906 | en_US |
dc.subject | Buffer layers | en_US |
dc.subject | Dielectric losses | en_US |
dc.subject | Epitaxial growth | en_US |
dc.subject | Lead compounds | en_US |
dc.subject | Pulsed laser deposition | en_US |
dc.title | Epitaxial growth and dielectric properties of Pb₀.₄Sr₀.₆TiO₃ thin films on (00l)-oriented metallic Li₀.₃Ni₀.₇O₂ coated MgO substrates | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: C. L. Mak | en_US |
dc.description.otherinformation | Author name used in this publication: K. H. Wong | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.volume | 90 | - |
dc.identifier.issue | 26 | - |
dc.identifier.doi | 10.1063/1.2752532 | - |
dcterms.abstract | Highly (00l)-oriented Li₀.₃Ni₀.₇O₂thin films have been fabricated on (001) MgO substrates by pulsed laser deposition. The Pb₀.₄Sr₀.₆TiO₃ (PST40) thin film deposited subsequently also shows a significant (00l)-oriented texture. Both the PST40 and Li₀.₃Ni₀.₇O₂have good epitaxial behavior. The epitaxial growth of the PST40 thin film is more perfect with the Li₀.₃Ni₀.₇O₂buffer layer due to the less distortion in the film. The dielectric tunability of the PST40 thin film with Li₀.₃Ni₀.₇O₂buffer layer therefore reaches 70%, which is 75% higher than that without Li₀.₃Ni₀.₇O₂buffer layer, and the dielectric loss of the PST40 thin film is 0.06. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 25 June 2007, v. 90, no. 26, 262906, p. 1-3 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2007-06-25 | - |
dc.identifier.isi | WOS:000247625500062 | - |
dc.identifier.scopus | 2-s2.0-34547292670 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r34042 | - |
dc.description.ros | 2006-2007 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
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File | Description | Size | Format | |
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Li_Epitaxial_Dielectric_Films.pdf | 366.6 kB | Adobe PDF | View/Open |
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