Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4885
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorLi, XT-
dc.creatorDu, PY-
dc.creatorMak, CL-
dc.creatorWong, KH-
dc.date.accessioned2014-12-11T08:24:50Z-
dc.date.available2014-12-11T08:24:50Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4885-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. T. Li et al., Appl. Phys. Lett. 90, 262906 (2007) and may be found at http://link.aip.org/link/?apl/90/262906en_US
dc.subjectBuffer layersen_US
dc.subjectDielectric lossesen_US
dc.subjectEpitaxial growthen_US
dc.subjectLead compoundsen_US
dc.subjectPulsed laser depositionen_US
dc.titleEpitaxial growth and dielectric properties of Pb₀.₄Sr₀.₆TiO₃ thin films on (00l)-oriented metallic Li₀.₃Ni₀.₇O₂ coated MgO substratesen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: C. L. Maken_US
dc.description.otherinformationAuthor name used in this publication: K. H. Wongen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume90-
dc.identifier.issue26-
dc.identifier.doi10.1063/1.2752532-
dcterms.abstractHighly (00l)-oriented Li₀.₃Ni₀.₇O₂thin films have been fabricated on (001) MgO substrates by pulsed laser deposition. The Pb₀.₄Sr₀.₆TiO₃ (PST40) thin film deposited subsequently also shows a significant (00l)-oriented texture. Both the PST40 and Li₀.₃Ni₀.₇O₂have good epitaxial behavior. The epitaxial growth of the PST40 thin film is more perfect with the Li₀.₃Ni₀.₇O₂buffer layer due to the less distortion in the film. The dielectric tunability of the PST40 thin film with Li₀.₃Ni₀.₇O₂buffer layer therefore reaches 70%, which is 75% higher than that without Li₀.₃Ni₀.₇O₂buffer layer, and the dielectric loss of the PST40 thin film is 0.06.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 25 June 2007, v. 90, no. 26, 262906, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2007-06-25-
dc.identifier.isiWOS:000247625500062-
dc.identifier.scopus2-s2.0-34547292670-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr34042-
dc.description.ros2006-2007 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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