Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4882
Title: Growth mode mapping and structural properties of controlled perovskite BaTiO₃/SrTiO₃heterostructure
Authors: Li, JL
Hao, JH 
Zhang, Y
Li, Y
Keywords: Atomic force microscopy
Epitaxial growth
Heterojunctions
Molecular beam epitaxy
Thin films
Transmission electron microscopy
Issue Date: 12-Nov-2007
Publisher: American Institute of Physics
Source: Applied physics letters, 12 Nov. 2007, v. 91, no. 20, 201919, p. 1-3 How to cite?
Journal: Applied physics letters 
Abstract: Perovskite heteroepitaxy was investigated under various conditions using laser molecular beam epitaxy. Well-controlled BaTiO₃/SrTiO₃ heterostructure was studied with in situ reflective high energy electron diffraction and ex situ atomic force microscopy, x-ray diffraction, and transmission electron microscopy. The growth mode map of BaTiO₃ thin films was obtained as a function of substrate temperature under 600 °C for various laser repetition rates. The effective activation energy of surface migration was determined to be 0.33 eV. A mechanism of surface migration in BaTiO₃ heteroepitaxy was described for a basic understanding of atomic-scale controlled preparation of ferroelectric heterostructures at low temperature.
URI: http://hdl.handle.net/10397/4882
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.2815749
Rights: © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Long et al., Appl. Phys. Lett. 91, 201919 (2007) and may be found at http://link.aip.org/link/?apl/91/201919
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