Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4882
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorLi, JL-
dc.creatorHao, JH-
dc.creatorZhang, Y-
dc.creatorLi, Y-
dc.date.accessioned2014-12-11T08:24:48Z-
dc.date.available2014-12-11T08:24:48Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4882-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Long et al., Appl. Phys. Lett. 91, 201919 (2007) and may be found at http://link.aip.org/link/?apl/91/201919en_US
dc.subjectAtomic force microscopyen_US
dc.subjectEpitaxial growthen_US
dc.subjectHeterojunctionsen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectThin filmsen_US
dc.subjectTransmission electron microscopyen_US
dc.titleGrowth mode mapping and structural properties of controlled perovskite BaTiO₃/SrTiO₃heterostructureen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume91-
dc.identifier.issue20-
dc.identifier.doi10.1063/1.2815749-
dcterms.abstractPerovskite heteroepitaxy was investigated under various conditions using laser molecular beam epitaxy. Well-controlled BaTiO₃/SrTiO₃ heterostructure was studied with in situ reflective high energy electron diffraction and ex situ atomic force microscopy, x-ray diffraction, and transmission electron microscopy. The growth mode map of BaTiO₃ thin films was obtained as a function of substrate temperature under 600 °C for various laser repetition rates. The effective activation energy of surface migration was determined to be 0.33 eV. A mechanism of surface migration in BaTiO₃ heteroepitaxy was described for a basic understanding of atomic-scale controlled preparation of ferroelectric heterostructures at low temperature.-
dcterms.bibliographicCitationApplied physics letters, 12 Nov. 2007, v. 91, no. 20, 201919, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2007-11-12-
dc.identifier.isiWOS:000251003500042-
dc.identifier.scopus2-s2.0-36249031462-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr36098-
dc.description.ros2007-2008 > Academic research: refereed > Publication in refereed journal-
dc.description.oapublished_final-
Appears in Collections:Journal/Magazine Article
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