Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4880
Title: Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO₂/SiO₂stack as the tunnel dielectric
Authors: Wang, S
Liu, WL
Wan, Q
Dai, J 
Lee, PF
Luo, S
Shen, Q
Zhang, M
Song, ZT
Lin, C
Keywords: Hafnium compounds
Germanium
Silicon compounds
Silicon
Elemental semiconductors
MIS structures
Nanostructured materials
Electron beam deposition
Leakage currents
Annealing
Transmission electron microscopy
Dielectric thin films
Impurity distribution
Issue Date: 14-Mar-2005
Publisher: American Institute of Physics
Source: Applied physics letters, 14 Mar. 2005, v. 86, no. 11, 113105, p. 1-3 How to cite?
Journal: Applied physics letters 
Abstract: A metal-insulator-semiconductor (MIS) structure containing a HfO₂control gate, a Ge nanocrystal-embedded HfO₂dielectric and a HfO₂/SiO₂stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO₂/SiO₂stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO₂layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current–voltage (I–V) and capacitance–voltage (C–V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 10¹² cm⁻² was achieved.
URI: http://hdl.handle.net/10397/4880
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.1864254
Rights: © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S. Wang et al., Appl. Phys. Lett. 86, 113105 (2005) and may be found at http://link.aip.org/link/?apl/86/113105
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