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http://hdl.handle.net/10397/4788
Title: | High-quality all-oxide Schottky junctions fabricated on heavily doped Nb:SrTiO₃ substrates | Authors: | Ruotolo, A Lam, CY Cheng, WF Wong, KH Leung, CW |
Issue Date: | 15-Aug-2007 | Source: | Physical review. B, Condensed matter and materials physics, 15 Aug. 2007, v. 76, no. 7, 075122, p. 1-5 | Abstract: | We present a detailed investigation of the electrical properties of epitaxial La₀.₇Sr₀.₃MnO₃∕SrTi₀.₉₈Nb₀.₀₂O₃ Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 10²⁰ cm⁻³. Moreover, the junctions show hysteretic current-voltage characteristics. | Keywords: | Heavily doped semiconductors Lanthanum compounds Niobium Rectification Schottky barriers Semiconductor-metal boundaries Strontium compounds |
Publisher: | American Physical Society | Journal: | Physical review. B, Condensed matter and materials physics | ISSN: | 1098-0121 | EISSN: | 1550-235X | DOI: | 10.1103/PhysRevB.76.075122 | Rights: | Physical Review B © 2007 The American Physical Society. The Journal's web site is located at http://prb.aps.org/ |
Appears in Collections: | Journal/Magazine Article |
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File | Description | Size | Format | |
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Ruotolo_All-oxide_Schottky_Junctions.pdf | 657.71 kB | Adobe PDF | View/Open |
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