Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4788
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.contributor | Materials Research Centre | - |
dc.creator | Ruotolo, A | - |
dc.creator | Lam, CY | - |
dc.creator | Cheng, WF | - |
dc.creator | Wong, KH | - |
dc.creator | Leung, CW | - |
dc.date.accessioned | 2014-12-11T08:23:36Z | - |
dc.date.available | 2014-12-11T08:23:36Z | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4788 | - |
dc.language.iso | en | en_US |
dc.publisher | American Physical Society | en_US |
dc.rights | Physical Review B © 2007 The American Physical Society. The Journal's web site is located at http://prb.aps.org/ | en_US |
dc.subject | Heavily doped semiconductors | en_US |
dc.subject | Lanthanum compounds | en_US |
dc.subject | Niobium | en_US |
dc.subject | Rectification | en_US |
dc.subject | Schottky barriers | en_US |
dc.subject | Semiconductor-metal boundaries | en_US |
dc.subject | Strontium compounds | en_US |
dc.title | High-quality all-oxide Schottky junctions fabricated on heavily doped Nb:SrTiO₃ substrates | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: A. Ruotolo | en_US |
dc.description.otherinformation | Author name used in this publication: W. F. Cheng | en_US |
dc.description.otherinformation | Author name used in this publication: K. H. Wong | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 5 | - |
dc.identifier.volume | 76 | - |
dc.identifier.issue | 7 | - |
dc.identifier.doi | 10.1103/PhysRevB.76.075122 | - |
dcterms.abstract | We present a detailed investigation of the electrical properties of epitaxial La₀.₇Sr₀.₃MnO₃∕SrTi₀.₉₈Nb₀.₀₂O₃ Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 10²⁰ cm⁻³. Moreover, the junctions show hysteretic current-voltage characteristics. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Physical review. B, Condensed matter and materials physics, 15 Aug. 2007, v. 76, no. 7, 075122, p. 1-5 | - |
dcterms.isPartOf | Physical review. B, Condensed matter and materials physics | - |
dcterms.issued | 2007-08-15 | - |
dc.identifier.isi | WOS:000249155300059 | - |
dc.identifier.scopus | 2-s2.0-34548156797 | - |
dc.identifier.eissn | 1550-235X | - |
dc.identifier.rosgroupid | r36367 | - |
dc.description.ros | 2007-2008 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Ruotolo_All-oxide_Schottky_Junctions.pdf | 657.71 kB | Adobe PDF | View/Open |
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