Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4788
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorRuotolo, A-
dc.creatorLam, CY-
dc.creatorCheng, WF-
dc.creatorWong, KH-
dc.creatorLeung, CW-
dc.date.accessioned2014-12-11T08:23:36Z-
dc.date.available2014-12-11T08:23:36Z-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10397/4788-
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsPhysical Review B © 2007 The American Physical Society. The Journal's web site is located at http://prb.aps.org/en_US
dc.subjectHeavily doped semiconductorsen_US
dc.subjectLanthanum compoundsen_US
dc.subjectNiobiumen_US
dc.subjectRectificationen_US
dc.subjectSchottky barriersen_US
dc.subjectSemiconductor-metal boundariesen_US
dc.subjectStrontium compoundsen_US
dc.titleHigh-quality all-oxide Schottky junctions fabricated on heavily doped Nb:SrTiO₃ substratesen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: A. Ruotoloen_US
dc.description.otherinformationAuthor name used in this publication: W. F. Chengen_US
dc.description.otherinformationAuthor name used in this publication: K. H. Wongen_US
dc.identifier.spage1-
dc.identifier.epage5-
dc.identifier.volume76-
dc.identifier.issue7-
dc.identifier.doi10.1103/PhysRevB.76.075122-
dcterms.abstractWe present a detailed investigation of the electrical properties of epitaxial La₀.₇Sr₀.₃MnO₃∕SrTi₀.₉₈Nb₀.₀₂O₃ Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 10²⁰ cm⁻³. Moreover, the junctions show hysteretic current-voltage characteristics.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationPhysical review. B, Condensed matter and materials physics, 15 Aug. 2007, v. 76, no. 7, 075122, p. 1-5-
dcterms.isPartOfPhysical review. B, Condensed matter and materials physics-
dcterms.issued2007-08-15-
dc.identifier.isiWOS:000249155300059-
dc.identifier.scopus2-s2.0-34548156797-
dc.identifier.eissn1550-235X-
dc.identifier.rosgroupidr36367-
dc.description.ros2007-2008 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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