High-quality all-oxide Schottky junctions fabricated on heavily doped Nb:SrTiO₃ substrates

Abstract

We present a detailed investigation of the electrical properties of epitaxial La₀.₇Sr₀.₃MnO₃∕SrTi₀.₉₈Nb₀.₀₂O₃ Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 10²⁰ cm⁻³. Moreover, the junctions show hysteretic current-voltage characteristics.