Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4788
Title: High-quality all-oxide Schottky junctions fabricated on heavily doped Nb:SrTiO₃ substrates
Authors: Ruotolo, A
Lam, CY
Cheng, WF
Wong, KH
Leung, CW 
Keywords: Heavily doped semiconductors
Lanthanum compounds
Niobium
Rectification
Schottky barriers
Semiconductor-metal boundaries
Strontium compounds
Issue Date: 15-Aug-2007
Publisher: American Physical Society
Source: Physical review B, condensed matter and materials physics, 15 Aug. 2007, v. 76, no. 7, 075122, p. 1-5 How to cite?
Journal: Physical review B 
Abstract: We present a detailed investigation of the electrical properties of epitaxial La₀.₇Sr₀.₃MnO₃∕SrTi₀.₉₈Nb₀.₀₂O₃ Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 10²⁰ cm⁻³. Moreover, the junctions show hysteretic current-voltage characteristics.
URI: http://hdl.handle.net/10397/4788
ISSN: 1098-0121 (print)
1550-235X (online)
DOI: 10.1103/PhysRevB.76.075122
Rights: Physical Review B © 2007 The American Physical Society. The Journal's web site is located at http://prb.aps.org/
Appears in Collections:Journal/Magazine Article

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