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http://hdl.handle.net/10397/4625
Title: | Simulation of interface dislocations effect on polarization distribution of ferroelectric thin films | Authors: | Zheng, Y Wang, B Woo, CH |
Issue Date: | 27-Feb-2006 | Source: | Applied physics letters, 27 Feb. 2006, v. 88, no. 9, 092903, p. 1-3 | Abstract: | Effects of interfacial dislocations on the properties of ferroelectric thin films are investigated, using the dynamic Ginzburg–Landau equation. Our results confirm the existence of a dead layer near the film/substrate interface. Due to the combined effects of the dislocations and the near-surface eigenstrain relaxation, the ferroelectric properties of about one-third of the film volume suffers. | Keywords: | Ferroelectric thin films Dielectric polarisation Dislocations Finite difference methods Ginzburg-Landau theory Dielectric relaxation |
Publisher: | American Institute of Physics | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | DOI: | 10.1063/1.2177365 | Rights: | © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Zheng, B. Wang & C. H. Woo, Appl. Phys. Lett. 88, 092903 (2006) and may be found at http://link.aip.org/link/?apl/88/092903 |
Appears in Collections: | Journal/Magazine Article |
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Zheng_Polarization_Ferroelectric_Films.pdf | 182.48 kB | Adobe PDF | View/Open |
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