Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4625
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dc.contributorDepartment of Electronic and Information Engineering-
dc.creatorZheng, Y-
dc.creatorWang, B-
dc.creatorWoo, CH-
dc.date.accessioned2014-12-11T08:24:40Z-
dc.date.available2014-12-11T08:24:40Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4625-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Zheng, B. Wang & C. H. Woo, Appl. Phys. Lett. 88, 092903 (2006) and may be found at http://link.aip.org/link/?apl/88/092903en_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectDielectric polarisationen_US
dc.subjectDislocationsen_US
dc.subjectFinite difference methodsen_US
dc.subjectGinzburg-Landau theoryen_US
dc.subjectDielectric relaxationen_US
dc.titleSimulation of interface dislocations effect on polarization distribution of ferroelectric thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: C. H. Wooen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume88-
dc.identifier.issue9-
dc.identifier.doi10.1063/1.2177365-
dcterms.abstractEffects of interfacial dislocations on the properties of ferroelectric thin films are investigated, using the dynamic Ginzburg–Landau equation. Our results confirm the existence of a dead layer near the film/substrate interface. Due to the combined effects of the dislocations and the near-surface eigenstrain relaxation, the ferroelectric properties of about one-third of the film volume suffers.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 27 Feb. 2006, v. 88, no. 9, 092903, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2006-02-27-
dc.identifier.isiWOS:000235736300064-
dc.identifier.scopus2-s2.0-33644698949-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr25620-
dc.description.ros2005-2006 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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