Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4624
Title: Simulation of twin boundary effect on characteristics of single grain-silicon thin film transistors
Authors: Yan, F 
Migliorato, P
Ishihara, R
Issue Date: 13-Aug-2007
Source: Applied physics letters, 13 Aug. 2007, v. 91, no. 7, 073509, p. 1-3
Abstract: The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with the increase of the angle between the normal direction of the twin boundary and the channel direction. A single twin boundary in contact with the drain can lead to higher leakage current because electron-hole generation is greatly enhanced by the trap states in the twin boundary.
Keywords: Electron-hole recombination
Elemental semiconductors
Leakage currents
Semiconductor device models
Silicon
Thin film transistors
Twin boundaries
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.2769951
Rights: © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. Yan, P. Migliorato, & R. Ishihara, Appl. Phys. Lett. 91, 073509 (2007) and may be found at http://link.aip.org/link/?apl/91/073509
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