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Title: Piezoelectric coefficient of aluminum nitride and gallium nitride
Authors: Lueng, CM
Chan, HLW 
Surya, C 
Choy, CL
Keywords: Aluminium compounds
Gallium compounds
III-V semiconductors
Piezoelectric materials
Piezoelectric thin films
Wide band gap semiconductors
Epitaxial layers
X-ray diffraction
Electrical resistivity
Issue Date: 1-Nov-2000
Publisher: American Institute of Physics
Source: Journal of applied physics, 1 Nov. 2000, v. 88, no. 9, p.5360-5363 How to cite?
Journal: Journal of applied physics 
Abstract: The piezoelectric coefficient d₃₃ of aluminum nitride (AlN) and gallium nitride (GaN) thin films grown on silicon substrates by molecular beam epitaxy have been measured using a laser interferometer. X-ray diffraction reveals that the AlN and GaN films consist mainly of crystals with a hexagonal wurtzite structure. In order to grow epitaxial GaN films, an AlN film was first deposited on silicon as the buffer layer, so the d₃₃ measurement for GaN was actually performed on GaN/AlN/Si multilayer systems. The relative permittivity and electrical resistivity of each constituent layer of the film and the potential drop across each layer were determined as a function of frequency. The potential drops were then used to calculate the piezoelectric coefficient d₃₃ of GaN. After correcting for substrate clamping, d₃₃ of AlN and GaN were found to be (5.1±0.1) and (3.1±0.1) pm Vˉ¹, respectively.
ISSN: 0021-8979
Rights: © 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C.M. Lueng et al. J. Appl. Phys. 88, 5360 (2000) and may be found at
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