Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/458
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.contributor | Department of Electronic and Information Engineering | - |
dc.creator | Lueng, CM | - |
dc.creator | Chan, HLW | - |
dc.creator | Surya, C | - |
dc.creator | Choy, CL | - |
dc.date.accessioned | 2014-12-11T08:25:13Z | - |
dc.date.available | 2014-12-11T08:25:13Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/458 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C.M. Lueng et al. J. Appl. Phys. 88, 5360 (2000) and may be found at http://link.aip.org/link/?jap/88/5360 | en_US |
dc.subject | Aluminium compounds | en_US |
dc.subject | Gallium compounds | en_US |
dc.subject | III-V semiconductors | en_US |
dc.subject | Piezoelectric materials | en_US |
dc.subject | Piezoelectric thin films | en_US |
dc.subject | Wide band gap semiconductors | en_US |
dc.subject | Epitaxial layers | en_US |
dc.subject | X-ray diffraction | en_US |
dc.subject | Permittivity | en_US |
dc.subject | Electrical resistivity | en_US |
dc.title | Piezoelectric coefficient of aluminum nitride and gallium nitride | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: C. M. Lueng | en_US |
dc.description.otherinformation | Author name used in this publication: C. Surya | en_US |
dc.identifier.spage | 5360 | - |
dc.identifier.epage | 5363 | - |
dc.identifier.volume | 88 | - |
dc.identifier.issue | 9 | - |
dcterms.abstract | The piezoelectric coefficient d₃₃ of aluminum nitride (AlN) and gallium nitride (GaN) thin films grown on silicon substrates by molecular beam epitaxy have been measured using a laser interferometer. X-ray diffraction reveals that the AlN and GaN films consist mainly of crystals with a hexagonal wurtzite structure. In order to grow epitaxial GaN films, an AlN film was first deposited on silicon as the buffer layer, so the d₃₃ measurement for GaN was actually performed on GaN/AlN/Si multilayer systems. The relative permittivity and electrical resistivity of each constituent layer of the film and the potential drop across each layer were determined as a function of frequency. The potential drops were then used to calculate the piezoelectric coefficient d₃₃ of GaN. After correcting for substrate clamping, d₃₃ of AlN and GaN were found to be (5.1±0.1) and (3.1±0.1) pm Vˉ¹, respectively. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 1 Nov. 2000, v. 88, no. 9, p.5360-5363 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2000-11-01 | - |
dc.identifier.isi | WOS:000089813800069 | - |
dc.identifier.scopus | 2-s2.0-0000726414 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.rosgroupid | r02480 | - |
dc.description.ros | 2000-2001 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
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