Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4422
Title: Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes
Authors: Ye, J
Zhao, Y
Tang, L
Chen, LM
Luk, CM
Yu, SF 
Lee, ST
Lau, SP 
Keywords: Electroluminescence
Gallium nitride
Heterojunctions
Light
Light emission
Polystyrenes
Two dimensional
Zinc oxide
Issue Date: 27-Jun-2011
Publisher: American Institute of Physics
Source: Applied physics letters, 27 June 2011, v. 98, no. 26, 263101, p. 1-3 How to cite?
Journal: Applied physics letters 
Abstract: The authors report the fabrication of heterojunction light emitting diodes (LEDs) based on two-dimensional (2D) hexagonal ordered n-type ZnO nanomesh and p-type GaN. The 2D ZnO nanomesh array was prepared by employing polystyrene spheres as a template. When a forward bias was applied to the LED, a strong ultraviolet (UV) electroluminescence peaked at 385 nm can be observed. The peak deconvolution revealed three emission peaks at 370, 388, and 420 nm. The origin of these emission peaks will be discussed. In addition, the LED was capable of exciting a red phosphor to convert UV light into red light.
URI: http://hdl.handle.net/10397/4422
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.3587576
Rights: © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Ye et al., Appl. Phys. Lett. 98, 263101 (2011) and may be found at http://apl.aip.org/resource/1/applab/v98/i26/p263101_s1.
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