Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4420
Title: Ferroelectric, piezoelectric, and leakage current properties of (K₀.₄₈Na₀.₄₈Li₀.₀₄)(Nb₀.₇₇₅Ta₀.₂₂₅)O₃ thin films grown by pulsed laser deposition
Authors: Wang, DY
Lin, D
Kwok, KW 
Chan, NY
Dai, J 
Li, S
Chan, HLW 
Keywords: Deposition
Electric field measurement
Electric fields
Ferroelectricity
Hysteresis
Piezoelectricity
Platinum
Pulsed laser deposition
Sodium
Thin film circuits
Thin films
Vapor deposition
Issue Date: 10-Jan-2011
Publisher: American Institute of Physics
Source: Applied physics letters, 10 Jan. 2011, v. 98, no. 2, 022902, p. 1-3 How to cite?
Journal: Applied physics letters 
Abstract: Lead-free K₀.₄₈Na₀.₄₈Li₀.₀₄ Nb₀.₇₇₅Ta₀.₂₂₅ O₃ (KNLNT) thin films were deposited on Pt(111)/Ti/SiO₂/Si(001) substrates using pulsed laser deposition. The film exhibited a well-defined ferroelectric hysteresis loop with a remnant polarization 2P[sub r] of 22.6 µC/cm² and a coercive field E[sub c] of 10.3 kV/mm. The effective piezoelectric coefficient d[sub 33,f] of the KNLNT thin films was found to be about 49 pm/V by piezoelectric force microscope. The dominant conduction mechanisms of Au/KNLNT/Pt thin film capacitor were determined to be bulk-limited space-charge-limited-current and Poole–Frenkle emission at low and high electric field strengths, respectively, within a measured temperature range of 130–370 K.
URI: http://hdl.handle.net/10397/4420
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.3535608
Rights: © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D.Y. Wang et al., Appl. Phys. Lett. 98, 022902 (2011) and may be found at http://apl.aip.org/resource/1/applab/v98/i2/p022902_s1.
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