Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4420
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Wang, DY | - |
dc.creator | Lin, D | - |
dc.creator | Kwok, KW | - |
dc.creator | Chan, NY | - |
dc.creator | Dai, J | - |
dc.creator | Li, S | - |
dc.creator | Chan, HLW | - |
dc.date.accessioned | 2014-12-11T08:24:37Z | - |
dc.date.available | 2014-12-11T08:24:37Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4420 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D.Y. Wang et al., Appl. Phys. Lett. 98, 022902 (2011) and may be found at http://apl.aip.org/resource/1/applab/v98/i2/p022902_s1. | en_US |
dc.subject | Deposition | en_US |
dc.subject | Electric field measurement | en_US |
dc.subject | Electric fields | en_US |
dc.subject | Ferroelectricity | en_US |
dc.subject | Hysteresis | en_US |
dc.subject | Piezoelectricity | en_US |
dc.subject | Platinum | en_US |
dc.subject | Pulsed laser deposition | en_US |
dc.subject | Sodium | en_US |
dc.subject | Thin film circuits | en_US |
dc.subject | Thin films | en_US |
dc.subject | Vapor deposition | en_US |
dc.title | Ferroelectric, piezoelectric, and leakage current properties of (K₀.₄₈Na₀.₄₈Li₀.₀₄)(Nb₀.₇₇₅Ta₀.₂₂₅)O₃ thin films grown by pulsed laser deposition | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: D. Y. Wang | en_US |
dc.description.otherinformation | Author name used in this publication: D. M. Lin | en_US |
dc.description.otherinformation | Author name used in this publication: K. W. Kwok | en_US |
dc.description.otherinformation | Author name used in this publication: J. Y. Dai | en_US |
dc.description.otherinformation | Author name used in this publication: H. L. W. Chan | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.volume | 98 | - |
dc.identifier.issue | 2 | - |
dc.identifier.doi | 10.1063/1.3535608 | - |
dcterms.abstract | Lead-free K₀.₄₈Na₀.₄₈Li₀.₀₄ Nb₀.₇₇₅Ta₀.₂₂₅ O₃ (KNLNT) thin films were deposited on Pt(111)/Ti/SiO₂/Si(001) substrates using pulsed laser deposition. The film exhibited a well-defined ferroelectric hysteresis loop with a remnant polarization 2P[sub r] of 22.6 µC/cm² and a coercive field E[sub c] of 10.3 kV/mm. The effective piezoelectric coefficient d[sub 33,f] of the KNLNT thin films was found to be about 49 pm/V by piezoelectric force microscope. The dominant conduction mechanisms of Au/KNLNT/Pt thin film capacitor were determined to be bulk-limited space-charge-limited-current and Poole–Frenkle emission at low and high electric field strengths, respectively, within a measured temperature range of 130–370 K. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 10 Jan. 2011, v. 98, no. 2, 022902, p. 1-3 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2011-01-10 | - |
dc.identifier.isi | WOS:000286470800046 | - |
dc.identifier.scopus | 2-s2.0-78751469038 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r55853 | - |
dc.description.ros | 2010-2011 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
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