Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4351
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorWu, W-
dc.creatorWang, Y-
dc.creatorPang, GKH-
dc.creatorWong, KH-
dc.creatorChoy, CL-
dc.date.accessioned2014-12-11T08:23:56Z-
dc.date.available2014-12-11T08:23:56Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4351-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Wu et al., Appl. Phys. Lett. 85, 1583 (2004) and may be found at http://apl.aip.org/resource/1/applab/v85/i9/p1583_s1en_US
dc.subjectPlatinumen_US
dc.subjectLead compoundsen_US
dc.subjectLanthanum compoundsen_US
dc.subjectStrontium compoundsen_US
dc.subjectFerroelectric materialsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectFerroelectric capacitorsen_US
dc.subjectThin film capacitorsen_US
dc.subjectVacuum depositionen_US
dc.subjectDislocationsen_US
dc.subjectStress relaxationen_US
dc.subjectElectrodesen_US
dc.subjectLattice constantsen_US
dc.subjectAnnealingen_US
dc.subjectDielectric hysteresisen_US
dc.subjectInternal stressesen_US
dc.titleEffect of lattice-misfit strain on the process-induced imprint behavior in epitaxial Pb(Zr₀.₅₂Ti₀.₄₈)O₃thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: G. K. H. Pangen_US
dc.description.otherinformationAuthor name used in this publication: K. H. Wongen_US
dc.description.otherinformationAuthor name used in this publication: C. L. Choyen_US
dc.identifier.spage1583-
dc.identifier.epage1585-
dc.identifier.volume85-
dc.identifier.issue9-
dc.identifier.doi10.1063/1.1786662-
dcterms.abstractThe effect of lattice-misfit strain on the process-induced imprint behavior in Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT) capacitors with Pt (top), and SrRuO₃, La₀.₇Sr₀.₃MnO₃or LaNiO₃ (bottom) electrodes has been studied. With the different oxide electrodes and by changing the deposition oxygen pressure, various lattice-misfit strains in the epitaxial PZT films have been produced. It was found that after in situ annealing at reduced oxygen pressures, the capacitors showed an increased voltage offset in the polarization-electric field hysteresis loops with increasing the misfit strain, irrelevant to the oxide electrodes employed, while lattice disorder at the bottom interface can effectively eliminate the voltage shift. Our results suggest that the imprint behavior is caused by oxygen loss via dislocations generated by the misfit strain relaxation at the growth temperature.-
dcterms.bibliographicCitationApplied physics letters, 30 Aug. 2004, v. 85, no. 9, p. 1583-1585-
dcterms.isPartOfApplied physics letters-
dcterms.issued2004-08-30-
dc.identifier.isiWOS:000223555000045-
dc.identifier.scopus2-s2.0-4944256178-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr22621-
dc.description.ros2004-2005 > Academic research: refereed > Publication in refereed journal-
dc.description.oapublished_final-
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