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Title: Electrical and pyroelectric properties of in-plane polarized lead lanthanum titanate thin film
Authors: Song, ZT
Chong, N
Chan, HLW 
Choy, CL 
Issue Date: 30-Jul-2001
Source: Applied physics letters, 30 July 2001, v. 79, no. 5, p. 668-670
Abstract: Pb[sub 0.9]La[sub 0.1]Ti[sub 0.975]O₃ (PLT10) thin films were deposited on SiO₂ /Si(100) substrates coated with a ZrO₂ buffer layer. Studies by x-ray diffraction and scanning electron microscopy reveal that the ZrO₂ film consists of both tetragonal and monoclinic phases, with the tetragonal phase being the dominant one. The PLT10 film has a perovskite structure and the grains in the film have a rather uniform size of about 50 nm. By using interdigital transducer (IDT) electrodes the in-plane electrical properties, hysteresis loop, and pyroelectric coefficient of the PLT10 film were measured. The dielectric constant and loss factor vary only slightly with frequency in the range 10³-10[sup 6] Hz, with the loss factor being less than 0.01 over the entire range. The leakage current density is lower than 2x10[sup -8]A/cm² at a bias field of 5 kV/cm. The remnant polarization and coercive field are 12.6 µC/cm² and 9.93 kV/cm, respectively. The film exhibits a reasonably high pyroelectric coefficient (95 µC/m²K) after it has been poled by applying 120 V ac at 0.1 Hz across the IDT electrodes.
Keywords: Lead compounds
Lanthanum compounds
Piezoelectric thin films
Pyroelectricity
Liquid phase deposited coatings
Dielectric polarisation
Dielectric hysteresis
Permittivity
Dielectric losses
Leakage currents
X-ray diffraction
Scanning electron microscopy
Piezoceramics
Ferroelectric thin films
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
Rights: © 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z.T. Song et al. Appl. Phys. Lett. 79, 668 (2001) and may be found at http://link.aip.org/link/?apl/79/668
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