Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/43354
Title: A van der Waals pn heterojunction with organic/inorganic semiconductors
Authors: He, D
Pan, Y
Nan, H
Gu, S
Yang, Z
Wu, B
Luo, X
Xu, B
Zhang, Y
Li, Y
Ni, Z
Wang, B
Zhu, J
Chai, Y 
Shi, Y
Wang, X
Issue Date: 2015
Publisher: American Institute of Physics
Source: Applied physics letters, 2015, v. 107, no. 18, 183103 How to cite?
Journal: Applied physics letters 
Abstract: van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate the hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling, and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with a power conversion efficiency of 0.31% and a photoresponsivity of 22 mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.
URI: http://hdl.handle.net/10397/43354
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4935028
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