Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/43354
Title: A van der Waals pn heterojunction with organic/inorganic semiconductors
Authors: He, D
Pan, Y
Nan, H
Gu, S
Yang, Z
Wu, B
Luo, X
Xu, B
Zhang, Y
Li, Y
Ni, Z
Wang, B
Zhu, J
Chai, Y 
Shi, Y
Wang, X
Issue Date: 2015
Source: Applied physics letters, 2015, v. 107, no. 18, 183103, p. 183103-1-183103-6
Abstract: van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate the hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling, and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with a power conversion efficiency of 0.31% and a photoresponsivity of 22 mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4935028
Rights: © 2015 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in D. He et al., Appl. Phys. Lett. 107, 183103 (2015) and may be found at https://dx.doi.org/10.1063/1.4935028
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