Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/43354
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dc.contributorDepartment of Applied Physics-
dc.creatorHe, D-
dc.creatorPan, Y-
dc.creatorNan, H-
dc.creatorGu, S-
dc.creatorYang, Z-
dc.creatorWu, B-
dc.creatorLuo, X-
dc.creatorXu, B-
dc.creatorZhang, Y-
dc.creatorLi, Y-
dc.creatorNi, Z-
dc.creatorWang, B-
dc.creatorZhu, J-
dc.creatorChai, Y-
dc.creatorShi, Y-
dc.creatorWang, X-
dc.date.accessioned2016-06-07T06:15:59Z-
dc.date.available2016-06-07T06:15:59Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/43354-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2015 AIP Publishing LLC.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in D. He et al., Appl. Phys. Lett. 107, 183103 (2015) and may be found at https://dx.doi.org/10.1063/1.4935028en_US
dc.titleA van der Waals pn heterojunction with organic/inorganic semiconductorsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume107-
dc.identifier.issue18-
dc.identifier.doi10.1063/1.4935028-
dcterms.abstractvan der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate the hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling, and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with a power conversion efficiency of 0.31% and a photoresponsivity of 22 mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 2015, v. 107, no. 18, 183103, p. 183103-1-183103-6-
dcterms.isPartOfApplied physics letters-
dcterms.issued2015-
dc.identifier.scopus2-s2.0-84946230126-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupid2015005727-
dc.description.ros2015-2016 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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