Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/424
Title: Low-temperature switching fatigue behavior of ferroelectric SrBi₂Ta₂O[sub 9] thin films
Authors: Yuan, GL
Liu, J
Zhang, ST
Wu, D
Wang, YP
Liu, Z
Chan, HLW 
Choy, CL
Keywords: Strontium compounds
Bismuth compounds
Ferroelectric materials
Ferroelectric switching
Ferroelectric thin films
Fatigue
Dielectric hysteresis
Pulsed laser deposition
Issue Date: 9-Feb-2004
Publisher: American Institute of Physics
Source: Applied physics letters, 9 Feb. 2004, v. 84, no. 6, p. 954-956 How to cite?
Journal: Applied physics letters 
Abstract: The ferroelectric hysteresis and fatigue behavior over a wide temperature range from 290 to 50 K for SrBi₂Ta₂O[sub 9] thin films with Pt electrodes on silicon substrates, prepared by metalorganic decomposition (MOD) and pulsed-laser deposition (PLD), are investigated. It is found that given a fixed electrical field amplitude, the coercivity of all films increases with decreasing temperature T. The saturated hysteresis loop easily obtained for the MOD-prepared thin films has its remnant polarization enhanced with decreasing T, but the PLD-prepared samples exhibit minor loops whose remnant polarization decays with decreasing T. While the films prepared by MOD exhibit improved fatigue resistance at low T, significant fatigue effect at low T is observed for the films prepared by PLD. Although we cannot rule out the effect of strain, the experimental results can be explained by competition between pinning and depinning of domain walls, which are dependent of temperature and defect charges.
URI: http://hdl.handle.net/10397/424
ISSN: 0003-6951
Rights: © 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in G.L. Yuan et al. Appl. Phys. Lett. 84, 954 (2004) and may be found at http://link.aip.org/link/?apl/84/954
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