Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4235
Title: Effects of Al addition on the native defects in hafnia
Authors: Li, Q
Koo, KM
Lau, WM
Lee, PF
Dai, J 
Hou, ZF
Gong, XG
Keywords: Aluminium
Hafnium compounds
Defect states
Electronic density of states
Energy gap
Valence bands
Vacancies (crystal)
Interstitials
Passivation
High-k dielectric thin films
Issue Date: 1-May-2006
Publisher: American Institute of Physics
Source: Applied physics letters, 1 May 2006, v. 88, no. 18, 182903, p. 1-3 How to cite?
Journal: Applied physics letters 
Abstract: Two occupied native defect bands are experimentally detected in pure HfO₂. The density of states of band one in the middle of the band gap reduces drastically with the Al addition, while that of band two slightly above the valence-band maximum remains rather unaffected. We attribute the two bands to the charged oxygen vacancy, and the oxygen-interstitial-related defect states of the HfO₂, respectively. We demonstrate that the added Al passivates the V[sub O]⁺ induced midgap states but has little effect on other aspects of the electronic structure of the material.
URI: http://hdl.handle.net/10397/4235
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.2196470
Rights: © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Q. Li et al., Appl. Phys. Lett. 88, 182903 (2006) and may be found at http://apl.aip.org/resource/1/applab/v88/i18/p182903_s1
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