Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4235
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Li, Q | - |
dc.creator | Koo, KM | - |
dc.creator | Lau, WM | - |
dc.creator | Lee, PF | - |
dc.creator | Dai, J | - |
dc.creator | Hou, ZF | - |
dc.creator | Gong, XG | - |
dc.date.accessioned | 2014-12-11T08:28:07Z | - |
dc.date.available | 2014-12-11T08:28:07Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4235 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Q. Li et al., Appl. Phys. Lett. 88, 182903 (2006) and may be found at http://apl.aip.org/resource/1/applab/v88/i18/p182903_s1 | en_US |
dc.subject | Aluminium | en_US |
dc.subject | Hafnium compounds | en_US |
dc.subject | Defect states | en_US |
dc.subject | Electronic density of states | en_US |
dc.subject | Energy gap | en_US |
dc.subject | Valence bands | en_US |
dc.subject | Vacancies (crystal) | en_US |
dc.subject | Interstitials | en_US |
dc.subject | Passivation | en_US |
dc.subject | High-k dielectric thin films | en_US |
dc.title | Effects of Al addition on the native defects in hafnia | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: P. F. Lee | en_US |
dc.description.otherinformation | Author name used in this publication: J. Y. Dai | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.volume | 88 | - |
dc.identifier.issue | 18 | - |
dc.identifier.doi | 10.1063/1.2196470 | - |
dcterms.abstract | Two occupied native defect bands are experimentally detected in pure HfO₂. The density of states of band one in the middle of the band gap reduces drastically with the Al addition, while that of band two slightly above the valence-band maximum remains rather unaffected. We attribute the two bands to the charged oxygen vacancy, and the oxygen-interstitial-related defect states of the HfO₂, respectively. We demonstrate that the added Al passivates the V[sub O]⁺ induced midgap states but has little effect on other aspects of the electronic structure of the material. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 1 May 2006, v. 88, no. 18, 182903, p. 1-3 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2006-05-01 | - |
dc.identifier.isi | WOS:000237321600063 | - |
dc.identifier.scopus | 2-s2.0-33646503749 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r26801 | - |
dc.description.ros | 2005-2006 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
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Li_A1_Defects_hafnia.pdf | 198.03 kB | Adobe PDF | View/Open |
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