Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4235
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dc.contributorDepartment of Applied Physics-
dc.creatorLi, Q-
dc.creatorKoo, KM-
dc.creatorLau, WM-
dc.creatorLee, PF-
dc.creatorDai, J-
dc.creatorHou, ZF-
dc.creatorGong, XG-
dc.date.accessioned2014-12-11T08:28:07Z-
dc.date.available2014-12-11T08:28:07Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4235-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Q. Li et al., Appl. Phys. Lett. 88, 182903 (2006) and may be found at http://apl.aip.org/resource/1/applab/v88/i18/p182903_s1en_US
dc.subjectAluminiumen_US
dc.subjectHafnium compoundsen_US
dc.subjectDefect statesen_US
dc.subjectElectronic density of statesen_US
dc.subjectEnergy gapen_US
dc.subjectValence bandsen_US
dc.subjectVacancies (crystal)en_US
dc.subjectInterstitialsen_US
dc.subjectPassivationen_US
dc.subjectHigh-k dielectric thin filmsen_US
dc.titleEffects of Al addition on the native defects in hafniaen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: P. F. Leeen_US
dc.description.otherinformationAuthor name used in this publication: J. Y. Daien_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume88-
dc.identifier.issue18-
dc.identifier.doi10.1063/1.2196470-
dcterms.abstractTwo occupied native defect bands are experimentally detected in pure HfO₂. The density of states of band one in the middle of the band gap reduces drastically with the Al addition, while that of band two slightly above the valence-band maximum remains rather unaffected. We attribute the two bands to the charged oxygen vacancy, and the oxygen-interstitial-related defect states of the HfO₂, respectively. We demonstrate that the added Al passivates the V[sub O]⁺ induced midgap states but has little effect on other aspects of the electronic structure of the material.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 1 May 2006, v. 88, no. 18, 182903, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2006-05-01-
dc.identifier.isiWOS:000237321600063-
dc.identifier.scopus2-s2.0-33646503749-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr26801-
dc.description.ros2005-2006 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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