Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4213
Title: A possible mechanism of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films
Authors: Wong, CK
Shin, FG
Keywords: Ferroelectric thin films
Permittivity
Dielectric hysteresis
Dielectric polarisation
Deformation
Electrical conductivity
Issue Date: 24-Jan-2005
Publisher: American Institute of Physics
Source: Applied physics letters, 24 Jan. 2005, v. 86, no. 4, 042901, p.1-3 How to cite?
Journal: Applied physics letters 
Abstract: We studied theoretically the hysteresis behavior of ferroelectric thin films. The anomalous ferroelectric response is discussed by use of a bilayer model. Electrical conductivities of the films have been taken into account. To model the effects of the inhomogeneity of polarization and permittivity across the interface, the film is assumed to possess a secondary dielectric∕ferroelectric phase (a dead or passive layer) with asymmetric conductivity. This configuration is found to produce large shifting (along the field axis) and deformation of the measured hysteresis loop. This is a manifestation of the asymmetric conductivity of the material. Theoretical calculation based on this model shows that the observed phenomena of shifted and skewed hysteresis loop in ferroelectric thin films can be explained in this way.
URI: http://hdl.handle.net/10397/4213
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.1853520
Rights: © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C. K. Wong & F. G. Shin, Appl. Phys. Lett. 86, 042901 (2005) and may be found at http://apl.aip.org/resource/1/applab/v86/i4/p042901_s1
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