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Title: Optical studies of ZnS:Mn films grown by pulsed laser deposition
Authors: Yeung, KM
Tsang, WS
Mak, CL 
Wong, KH
Keywords: Zinc compounds
II-VI semiconductors
Semiconductor thin films
Pulsed laser depositiontion
X-ray diffraction
Visible spectra
Refractive index
Absorption coefficients
Energy gap
Issue Date: 1-Oct-2002
Publisher: American Institute of Physics
Source: Journal of applied physics, 1 Oct. 2002, v. 92, no. 7, p. 3636-3640 How to cite?
Journal: Journal of applied physics 
Abstract: High-quality ZnS:Mn thin films have been deposited on (001)Si substrates at various temperatures using pulsed laser deposition. Their structural properties were characterized by x-ray diffraction. Optical studies by spectroscopic ellipsometry, optical transmittance, and photoluminescence measurements were systematically carried out on all film samples. In the analysis of the measured SE spectra, a modified double-layer Sellmeier model was adopted to represent the optical properties of the ZnS:Mn films. In this model, the films were assumed to consist of two layers—a bottom bulk ZnS:Mn layer and a surface layer composed of bulk ZnS:Mn as well as void. Good agreement was obtained between the measured spectra and the model calculations. Changes in the refractive indices of the ZnS:Mn films as a function of growth temperature were investigated. The PL and absorption measurements revealed that the orange-yellow emission band at ~590 nm and the absorption edge at ~370 nm upshifted to shorter wavelengths for films deposited at higher substrate temperatures. These results imply that the energy gap of the ZnS:Mn films increases with growth temperature. The observed changes of optical properties in these films are correlated to their structural qualities.
ISSN: 0021-8979 (print)
1089-7550 (online)
DOI: 10.1063/1.1503389
Rights: © 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K. M. Yeung et al., J. Appl. Phys. 92, 3636 (2002) and may be found at
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