Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4192
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorYeung, KM-
dc.creatorTsang, WS-
dc.creatorMak, CL-
dc.creatorWong, KH-
dc.date.accessioned2014-12-11T08:24:27Z-
dc.date.available2014-12-11T08:24:27Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4192-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K. M. Yeung et al., J. Appl. Phys. 92, 3636 (2002) and may be found at http://link.aip.org/link/?jap/92/3636.en_US
dc.subjectZinc compoundsen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectSemiconductor thin filmsen_US
dc.subjectManganeseen_US
dc.subjectPulsed laser depositiontionen_US
dc.subjectX-ray diffractionen_US
dc.subjectPhotoluminescenceen_US
dc.subjectVisible spectraen_US
dc.subjectRefractive indexen_US
dc.subjectAbsorption coefficientsen_US
dc.subjectEnergy gapen_US
dc.titleOptical studies of ZnS:Mn films grown by pulsed laser depositionen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: C. L. Maken_US
dc.description.otherinformationAuthor name used in this publication: K. H. Wongen_US
dc.identifier.spage3636-
dc.identifier.epage3640-
dc.identifier.volume92-
dc.identifier.issue7-
dc.identifier.doi10.1063/1.1503389-
dcterms.abstractHigh-quality ZnS:Mn thin films have been deposited on (001)Si substrates at various temperatures using pulsed laser deposition. Their structural properties were characterized by x-ray diffraction. Optical studies by spectroscopic ellipsometry, optical transmittance, and photoluminescence measurements were systematically carried out on all film samples. In the analysis of the measured SE spectra, a modified double-layer Sellmeier model was adopted to represent the optical properties of the ZnS:Mn films. In this model, the films were assumed to consist of two layers—a bottom bulk ZnS:Mn layer and a surface layer composed of bulk ZnS:Mn as well as void. Good agreement was obtained between the measured spectra and the model calculations. Changes in the refractive indices of the ZnS:Mn films as a function of growth temperature were investigated. The PL and absorption measurements revealed that the orange-yellow emission band at ~590 nm and the absorption edge at ~370 nm upshifted to shorter wavelengths for films deposited at higher substrate temperatures. These results imply that the energy gap of the ZnS:Mn films increases with growth temperature. The observed changes of optical properties in these films are correlated to their structural qualities.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 Oct. 2002, v. 92, no. 7, p. 3636-3640-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2002-10-01-
dc.identifier.isiWOS:000178087600033-
dc.identifier.scopus2-s2.0-18644367506-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr13755-
dc.description.ros2002-2003 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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