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Title: Epitaxial growth of yttrium-stabilized HfO₂ high-k gate dielectric thin films on Si
Authors: Dai, J 
Lee, PF
Wong, KH
Chan, HLW 
Choy, CL
Keywords: Hafnium compounds
Pulsed laser deposition
Vapour phase epitaxial growth
Dielectric thin films
Transmission electron microscopy
Interface structure
Chemical interdiffusion
Bonds (chemical)
Semiconductor-insulator boundaries
Leakage currents
Issue Date: 15-Jul-2003
Publisher: American Institute of Physics
Source: Journal of applied physics, 15 July 2003, v. 94, no. 2, p. 912-915 How to cite?
Journal: Journal of applied physics 
Abstract: Epitaxial yttrium-stabilized HfO₂ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550°C. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si//(100)HfO₂ and [001]Si//[001]HfO₂. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion. X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO₂thin film on bare Si is via a direct growth mechanism without involving the reaction between Hf atoms and SiO₂layer. High-frequency capacitance-voltage measurement on an as-grown 40-Å yttrium-stabilized HfO₂epitaxial film yielded an effective dielectric constant of about 14 and equivalent oxide thickness to SiO₂of 12 Å. The leakage current density is 7.0x10ˉ² A/cm² at 1 V gate bias voltage.
ISSN: 0021-8979
Rights: © 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J.Y. Dai et al. J. Appl. Phys. 94, 912 (2003) and may be found at
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