Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/407
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dc.contributorDepartment of Applied Physics-
dc.creatorDai, J-
dc.creatorLee, PF-
dc.creatorWong, KH-
dc.creatorChan, HLW-
dc.creatorChoy, CL-
dc.date.accessioned2014-12-11T08:27:35Z-
dc.date.available2014-12-11T08:27:35Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/407-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J.Y. Dai et al. J. Appl. Phys. 94, 912 (2003) and may be found at http://link.aip.org/link/?jap/94/912.en_US
dc.subjectHafnium compoundsen_US
dc.subjectYttriumen_US
dc.subjectPulsed laser depositionen_US
dc.subjectVapour phase epitaxial growthen_US
dc.subjectDielectric thin filmsen_US
dc.subjectTransmission electron microscopyen_US
dc.subjectInterface structureen_US
dc.subjectChemical interdiffusionen_US
dc.subjectBonds (chemical)en_US
dc.subjectCapacitanceen_US
dc.subjectPermittivityen_US
dc.subjectSemiconductor-insulator boundariesen_US
dc.subjectLeakage currentsen_US
dc.titleEpitaxial growth of yttrium-stabilized HfO₂ high-k gate dielectric thin films on Sien_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage912-
dc.identifier.epage915-
dc.identifier.volume94-
dc.identifier.issue2-
dcterms.abstractEpitaxial yttrium-stabilized HfO₂ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550°C. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si//(100)HfO₂ and [001]Si//[001]HfO₂. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion. X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO₂thin film on bare Si is via a direct growth mechanism without involving the reaction between Hf atoms and SiO₂layer. High-frequency capacitance-voltage measurement on an as-grown 40-Å yttrium-stabilized HfO₂epitaxial film yielded an effective dielectric constant of about 14 and equivalent oxide thickness to SiO₂of 12 Å. The leakage current density is 7.0x10ˉ² A/cm² at 1 V gate bias voltage.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 15 July 2003, v. 94, no. 2, p. 912-915-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2003-07-15-
dc.identifier.isiWOS:000183842200014-
dc.identifier.scopus2-s2.0-0042267310-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr16640-
dc.description.ros2003-2004 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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