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Title: | In-plane dielectric properties of epitaxial 0.65Pb(Mg[sub ⅓]Nb[sub ⅔])O₃-0.35 PbTiO₃ thin films in a very wide frequency range | Authors: | Wang, Y Cheng, YL Cheng, KC Chan, HLW Choy, CL Liu, ZR |
Issue Date: | 30-Aug-2004 | Source: | Applied physics letters, 30 Aug. 2004, v. 85, no. 9, p.1580-1582 | Abstract: | The in-plane dielectric properties of epitaxial 0.65Pb(Mg[sub ⅓]Nb[sub ⅔]O₃−0.35 PbTiO₃ thin films deposited on MgO by pulsed-laser ablation were determined over a wide frequency range and compared with single crystals and ceramics. Depressed values of the dielectric constant, induced diffused phase transition, dielectric relaxation, and nonlinear behaviors were observed in the films. The overall dielectric behaviors of the films were found to be a mixture of that of relaxor ferroelectrics and normal ferroelectrics. The correlation of the microstructural features (mechanical clamping, small grain size, and epitaxial nature) and the dielectric behaviors was discussed. | Keywords: | Lead compounds Piezoceramics Relaxor ferroelectrics Piezoelectric thin films Ferroelectric thin films Pulsed laser deposition Permittivity Dielectric relaxation Grain size Ferroelastic transitions Epitaxial layers |
Publisher: | American Institute of Physics | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | Rights: | © 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Wang et al. Appl. Phys. Lett. 85, 1580 (2004) and may be found at http://link.aip.org/link/?apl/85/1580. |
Appears in Collections: | Journal/Magazine Article |
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