Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/401
Title: In-plane dielectric properties of epitaxial 0.65Pb(Mg[sub ⅓]Nb[sub ⅔])O₃-0.35 PbTiO₃ thin films in a very wide frequency range
Authors: Wang, Y 
Cheng, YL
Cheng, KC
Chan, HLW 
Choy, CL
Liu, ZR
Keywords: Lead compounds
Piezoceramics
Relaxor ferroelectrics
Piezoelectric thin films
Ferroelectric thin films
Pulsed laser deposition
Permittivity
Dielectric relaxation
Grain size
Ferroelastic transitions
Epitaxial layers
Issue Date: 30-Aug-2004
Publisher: American Institute of Physics
Source: Applied physics letters, 30 Aug. 2004, v. 85, no. 9, p.1580-1582 How to cite?
Journal: Applied physics letters 
Abstract: The in-plane dielectric properties of epitaxial 0.65Pb(Mg[sub ⅓]Nb[sub ⅔]O₃−0.35 PbTiO₃ thin films deposited on MgO by pulsed-laser ablation were determined over a wide frequency range and compared with single crystals and ceramics. Depressed values of the dielectric constant, induced diffused phase transition, dielectric relaxation, and nonlinear behaviors were observed in the films. The overall dielectric behaviors of the films were found to be a mixture of that of relaxor ferroelectrics and normal ferroelectrics. The correlation of the microstructural features (mechanical clamping, small grain size, and epitaxial nature) and the dielectric behaviors was discussed.
URI: http://hdl.handle.net/10397/401
ISSN: 0003-6951
Rights: © 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Wang et al. Appl. Phys. Lett. 85, 1580 (2004) and may be found at http://link.aip.org/link/?apl/85/1580.
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