Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/401
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.contributor | Materials Research Centre | - |
dc.creator | Wang, Y | - |
dc.creator | Cheng, YL | - |
dc.creator | Cheng, KC | - |
dc.creator | Chan, HLW | - |
dc.creator | Choy, CL | - |
dc.creator | Liu, ZR | - |
dc.date.accessioned | 2014-12-11T08:28:02Z | - |
dc.date.available | 2014-12-11T08:28:02Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/401 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Wang et al. Appl. Phys. Lett. 85, 1580 (2004) and may be found at http://link.aip.org/link/?apl/85/1580. | en_US |
dc.subject | Lead compounds | en_US |
dc.subject | Piezoceramics | en_US |
dc.subject | Relaxor ferroelectrics | en_US |
dc.subject | Piezoelectric thin films | en_US |
dc.subject | Ferroelectric thin films | en_US |
dc.subject | Pulsed laser deposition | en_US |
dc.subject | Permittivity | en_US |
dc.subject | Dielectric relaxation | en_US |
dc.subject | Grain size | en_US |
dc.subject | Ferroelastic transitions | en_US |
dc.subject | Epitaxial layers | en_US |
dc.title | In-plane dielectric properties of epitaxial 0.65Pb(Mg[sub ⅓]Nb[sub ⅔])O₃-0.35 PbTiO₃ thin films in a very wide frequency range | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: Y. Wang | en_US |
dc.description.otherinformation | Author name used in this publication: H. L. W. Chan | en_US |
dc.description.otherinformation | Author name used in this publication: C. L. Choy | en_US |
dc.description.otherinformation | Author name used in this publication: K. C. Cheng | en_US |
dc.identifier.spage | 1580 | - |
dc.identifier.epage | 1582 | - |
dc.identifier.volume | 85 | - |
dc.identifier.issue | 9 | - |
dcterms.abstract | The in-plane dielectric properties of epitaxial 0.65Pb(Mg[sub ⅓]Nb[sub ⅔]O₃−0.35 PbTiO₃ thin films deposited on MgO by pulsed-laser ablation were determined over a wide frequency range and compared with single crystals and ceramics. Depressed values of the dielectric constant, induced diffused phase transition, dielectric relaxation, and nonlinear behaviors were observed in the films. The overall dielectric behaviors of the films were found to be a mixture of that of relaxor ferroelectrics and normal ferroelectrics. The correlation of the microstructural features (mechanical clamping, small grain size, and epitaxial nature) and the dielectric behaviors was discussed. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 30 Aug. 2004, v. 85, no. 9, p.1580-1582 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2004-08-30 | - |
dc.identifier.isi | WOS:000223555000044 | - |
dc.identifier.scopus | 2-s2.0-4944220023 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r23519 | - |
dc.description.ros | 2004-2005 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
wide_frequency_04.pdf | 65.97 kB | Adobe PDF | View/Open |
Page views
106
Last Week
0
0
Last month
Citations as of Apr 21, 2024
Downloads
74
Citations as of Apr 21, 2024
SCOPUSTM
Citations
26
Last Week
0
0
Last month
0
0
Citations as of Apr 19, 2024
WEB OF SCIENCETM
Citations
25
Last Week
0
0
Last month
0
0
Citations as of Apr 18, 2024
Google ScholarTM
Check
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.