Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/401
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorWang, Y-
dc.creatorCheng, YL-
dc.creatorCheng, KC-
dc.creatorChan, HLW-
dc.creatorChoy, CL-
dc.creatorLiu, ZR-
dc.date.accessioned2014-12-11T08:28:02Z-
dc.date.available2014-12-11T08:28:02Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/401-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Wang et al. Appl. Phys. Lett. 85, 1580 (2004) and may be found at http://link.aip.org/link/?apl/85/1580.en_US
dc.subjectLead compoundsen_US
dc.subjectPiezoceramicsen_US
dc.subjectRelaxor ferroelectricsen_US
dc.subjectPiezoelectric thin filmsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectPulsed laser depositionen_US
dc.subjectPermittivityen_US
dc.subjectDielectric relaxationen_US
dc.subjectGrain sizeen_US
dc.subjectFerroelastic transitionsen_US
dc.subjectEpitaxial layersen_US
dc.titleIn-plane dielectric properties of epitaxial 0.65Pb(Mg[sub ⅓]Nb[sub ⅔])O₃-0.35 PbTiO₃ thin films in a very wide frequency rangeen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: Y. Wangen_US
dc.description.otherinformationAuthor name used in this publication: H. L. W. Chanen_US
dc.description.otherinformationAuthor name used in this publication: C. L. Choyen_US
dc.description.otherinformationAuthor name used in this publication: K. C. Chengen_US
dc.identifier.spage1580-
dc.identifier.epage1582-
dc.identifier.volume85-
dc.identifier.issue9-
dcterms.abstractThe in-plane dielectric properties of epitaxial 0.65Pb(Mg[sub ⅓]Nb[sub ⅔]O₃−0.35 PbTiO₃ thin films deposited on MgO by pulsed-laser ablation were determined over a wide frequency range and compared with single crystals and ceramics. Depressed values of the dielectric constant, induced diffused phase transition, dielectric relaxation, and nonlinear behaviors were observed in the films. The overall dielectric behaviors of the films were found to be a mixture of that of relaxor ferroelectrics and normal ferroelectrics. The correlation of the microstructural features (mechanical clamping, small grain size, and epitaxial nature) and the dielectric behaviors was discussed.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 30 Aug. 2004, v. 85, no. 9, p.1580-1582-
dcterms.isPartOfApplied physics letters-
dcterms.issued2004-08-30-
dc.identifier.isiWOS:000223555000044-
dc.identifier.scopus2-s2.0-4944220023-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr23519-
dc.description.ros2004-2005 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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