A study of indium doped tin oxide as electrode of ferroelectric films

Abstract

研究了sol -gel掺锡氧化铟 (ITO)溶胶在SiO2 /Si衬底和光学玻璃衬底上的成膜及结晶性能 ,并与CVD法生长的ITO薄膜作了对比。结论是 ,sol -gelITO膜 ,虽然具有与CVDITO膜相似的结晶性能和较高的导电性 ,但以sol -gelITO膜作下电极 ,无法使PLT、PZT的sol -gel膜具有明显的结晶取向。因漏电太大 ,sol -gelITO也无法作sol -gel铁电膜 (如PLT ,PZT)的上电极。但在CVDITO膜上 ,sol -gel铁电膜能很好结晶 ,且Au/PLT/ITO电容 ,具有良好的电学性能。 The formation and crystallization of indium doped tin oxide film by sol-gel precess on SiO 2/Si and borosilicate glass were investigated. It was compared with ITO formed by CVD method on borosilicate glass. The results show that sol-gel ITO films on SiO 2/Si and glass substrates have good crystallinity and conduction like ITO formed by CVD on borosilicate glass, but sol-gel PLT and PZT films can not form obvious texture on the sol-gel ITO film as bottom electrode. Because of large leakage sol-gel ITO film can not be used as top electrode for sol-gel PLT and PZT. The Au/PLT/ITO (CVD) ferroelectric capacitor with good electrical properties was obtained.