Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/40049
Title: A study of indium doped tin oxide as electrode of ferroelectric films
Other Titles: ITO用作铁电薄膜电极的研究
Authors: Li, J
Chen, H
Li, K
Tong, KY
Chan, HLW 
Keywords: Indium-tin oxide
Electrode of ferroelectric capacitor
Sol-gel method
Issue Date: 2001
Publisher: 中国学术期刊(光盘版)电子杂志社
Source: 功能材料 (Journal of functional materials), 2001, no. 1, p. 64-66 How to cite?
Journal: 功能材料 (Journal of functional materials) 
Abstract: 研究了sol -gel掺锡氧化铟 (ITO)溶胶在SiO2 /Si衬底和光学玻璃衬底上的成膜及结晶性能 ,并与CVD法生长的ITO薄膜作了对比。结论是 ,sol -gelITO膜 ,虽然具有与CVDITO膜相似的结晶性能和较高的导电性 ,但以sol -gelITO膜作下电极 ,无法使PLT、PZT的sol -gel膜具有明显的结晶取向。因漏电太大 ,sol -gelITO也无法作sol -gel铁电膜 (如PLT ,PZT)的上电极。但在CVDITO膜上 ,sol -gel铁电膜能很好结晶 ,且Au/PLT/ITO电容 ,具有良好的电学性能。
The formation and crystallization of indium doped tin oxide film by sol-gel precess on SiO 2/Si and borosilicate glass were investigated. It was compared with ITO formed by CVD method on borosilicate glass. The results show that sol-gel ITO films on SiO 2/Si and glass substrates have good crystallinity and conduction like ITO formed by CVD on borosilicate glass, but sol-gel PLT and PZT films can not form obvious texture on the sol-gel ITO film as bottom electrode. Because of large leakage sol-gel ITO film can not be used as top electrode for sol-gel PLT and PZT. The Au/PLT/ITO (CVD) ferroelectric capacitor with good electrical properties was obtained.
URI: http://hdl.handle.net/10397/40049
ISSN: 1001-9731
Rights: © 2001 China Academic Journal Electronic Publishing House. It is to be used strictly for educational and research use.
© 2001 中国学术期刊电子杂志出版社。本内容的使用仅限于教育、科研之目的。
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