Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/40049
| DC Field | Value | Language |
|---|---|---|
| dc.contributor | Department of Applied Physics | - |
| dc.contributor | Department of Electronic and Information Engineering | - |
| dc.creator | Li, J | - |
| dc.creator | Chen, H | - |
| dc.creator | Li, K | - |
| dc.creator | Tong, KY | - |
| dc.creator | Chan, HLW | - |
| dc.date.accessioned | 2016-05-17T10:08:59Z | - |
| dc.date.available | 2016-05-17T10:08:59Z | - |
| dc.identifier.issn | 1001-9731 | - |
| dc.identifier.uri | http://hdl.handle.net/10397/40049 | - |
| dc.language.iso | zh | en_US |
| dc.publisher | 中国学术期刊(光盘版)电子杂志社 | en_US |
| dc.rights | © 2001 China Academic Journal Electronic Publishing House. It is to be used strictly for educational and research use. | en_US |
| dc.rights | © 2001 中国学术期刊电子杂志出版社。本内容的使用仅限于教育、科研之目的。 | en_US |
| dc.subject | Indium-tin oxide | en_US |
| dc.subject | Electrode of ferroelectric capacitor | en_US |
| dc.subject | Sol-gel method | en_US |
| dc.title | A study of indium doped tin oxide as electrode of ferroelectric films | en_US |
| dc.type | Journal/Magazine Article | en_US |
| dc.identifier.spage | 64 | - |
| dc.identifier.epage | 66 | - |
| dc.identifier.issue | 1 | - |
| dcterms.abstract | 研究了sol -gel掺锡氧化铟 (ITO)溶胶在SiO2 /Si衬底和光学玻璃衬底上的成膜及结晶性能 ,并与CVD法生长的ITO薄膜作了对比。结论是 ,sol -gelITO膜 ,虽然具有与CVDITO膜相似的结晶性能和较高的导电性 ,但以sol -gelITO膜作下电极 ,无法使PLT、PZT的sol -gel膜具有明显的结晶取向。因漏电太大 ,sol -gelITO也无法作sol -gel铁电膜 (如PLT ,PZT)的上电极。但在CVDITO膜上 ,sol -gel铁电膜能很好结晶 ,且Au/PLT/ITO电容 ,具有良好的电学性能。 | - |
| dcterms.abstract | The formation and crystallization of indium doped tin oxide film by sol-gel precess on SiO 2/Si and borosilicate glass were investigated. It was compared with ITO formed by CVD method on borosilicate glass. The results show that sol-gel ITO films on SiO 2/Si and glass substrates have good crystallinity and conduction like ITO formed by CVD on borosilicate glass, but sol-gel PLT and PZT films can not form obvious texture on the sol-gel ITO film as bottom electrode. Because of large leakage sol-gel ITO film can not be used as top electrode for sol-gel PLT and PZT. The Au/PLT/ITO (CVD) ferroelectric capacitor with good electrical properties was obtained. | - |
| dcterms.accessRights | open access | en_US |
| dcterms.alternative | ITO用作铁电薄膜电极的研究 | - |
| dcterms.bibliographicCitation | 功能材料 (Journal of functional materials), 2001, no. 1, p. 64-66 | - |
| dcterms.isPartOf | 功能材料 (Journal of functional materials) | - |
| dcterms.issued | 2001 | - |
| dc.identifier.rosgroupid | r03867 | - |
| dc.description.ros | 2000-2001 > Academic research: refereed > Publication in refereed journal | - |
| dc.description.oa | Version of Record | en_US |
| dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
| dc.description.pubStatus | Published | en_US |
| Appears in Collections: | Journal/Magazine Article | |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| r03867.pdf | 139.26 kB | Adobe PDF | View/Open |
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