Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/392
Title: Microwave characterization of (Pb,La)TiO₃ thin films integrated on ZrO₂/SiO₂/Si wafers by sol-gel techniques
Authors: Song, ZT
Wang, Y 
Chan, HLW 
Choy, CL 
Feng, SL
Issue Date: 15-Nov-2004
Source: Applied physics letters, 15 Nov. 2004, v. 85, no. 20, p.4696-4698
Abstract: Polycrystalline perovskite lead lanthanum titanate (PLT) thin films were prepared by a sol-gel method on ZrO₂/SiO₂/Si substrates. The structure of the films was studied by x-ray diffraction and scanning electron microscopy, and the microwave dielectric properties characterized on a network analyzer. A strong dependence of the dielectric constant of PLT films and, correspondingly, the resonance frequency of PLT-based interdigital capacitor on the sample preparation conditions were observed. They resulted from the structural transformation of PLT from a layered structure to a uniform film as the annealing temperature was raised from 550 to 700 °C, suggesting a possible way to modify the device performance by controlling the layered structure of the ferroelectric film.
Keywords: Lead compounds
Lanthanum compounds
Ferroelectric thin films
Annealing
Microwave materials
Permittivity
Dielectric resonance
Ferroelectric capacitors
Thin film capacitors
Spin coating
Sol-gel processing
X-ray diffraction
Scanning electron microscopy
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
Rights: © 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z.T. Song et al. Appl. Phys. Lett. 85, 4696 (2004) and may be found at http://link.aip.org/link/?apl/85/4696
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