Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/392
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorSong, ZT-
dc.creatorWang, Y-
dc.creatorChan, HLW-
dc.creatorChoy, CL-
dc.creatorFeng, SL-
dc.date.accessioned2014-12-11T08:27:31Z-
dc.date.available2014-12-11T08:27:31Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/392-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z.T. Song et al. Appl. Phys. Lett. 85, 4696 (2004) and may be found at http://link.aip.org/link/?apl/85/4696en_US
dc.subjectLead compoundsen_US
dc.subjectLanthanum compoundsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectAnnealingen_US
dc.subjectMicrowave materialsen_US
dc.subjectPermittivityen_US
dc.subjectDielectric resonanceen_US
dc.subjectFerroelectric capacitorsen_US
dc.subjectThin film capacitorsen_US
dc.subjectSpin coatingen_US
dc.subjectSol-gel processingen_US
dc.subjectX-ray diffractionen_US
dc.subjectScanning electron microscopyen_US
dc.titleMicrowave characterization of (Pb,La)TiO₃ thin films integrated on ZrO₂/SiO₂/Si wafers by sol-gel techniquesen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage4696-
dc.identifier.epage4698-
dc.identifier.volume85-
dc.identifier.issue20-
dcterms.abstractPolycrystalline perovskite lead lanthanum titanate (PLT) thin films were prepared by a sol-gel method on ZrO₂/SiO₂/Si substrates. The structure of the films was studied by x-ray diffraction and scanning electron microscopy, and the microwave dielectric properties characterized on a network analyzer. A strong dependence of the dielectric constant of PLT films and, correspondingly, the resonance frequency of PLT-based interdigital capacitor on the sample preparation conditions were observed. They resulted from the structural transformation of PLT from a layered structure to a uniform film as the annealing temperature was raised from 550 to 700 °C, suggesting a possible way to modify the device performance by controlling the layered structure of the ferroelectric film.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 15 Nov. 2004, v. 85, no. 20, p.4696-4698-
dcterms.isPartOfApplied physics letters-
dcterms.issued2004-11-15-
dc.identifier.isiWOS:000225166400046-
dc.identifier.scopus2-s2.0-10944226769-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr21542-
dc.description.ros2004-2005 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
sol-gel_techniques_04.pdf314.09 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

120
Last Week
1
Last month
Citations as of Mar 17, 2024

Downloads

203
Citations as of Mar 17, 2024

SCOPUSTM   
Citations

14
Last Week
0
Last month
0
Citations as of Mar 1, 2024

WEB OF SCIENCETM
Citations

9
Last Week
0
Last month
0
Citations as of Mar 14, 2024

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.