Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/392
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorSong, ZT-
dc.creatorWang, Y-
dc.creatorChan, HLW-
dc.creatorChoy, CL-
dc.creatorFeng, SL-
dc.date.accessioned2014-12-11T08:27:31Z-
dc.date.available2014-12-11T08:27:31Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/392-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z.T. Song et al. Appl. Phys. Lett. 85, 4696 (2004) and may be found at http://link.aip.org/link/?apl/85/4696en_US
dc.subjectLead compoundsen_US
dc.subjectLanthanum compoundsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectAnnealingen_US
dc.subjectMicrowave materialsen_US
dc.subjectPermittivityen_US
dc.subjectDielectric resonanceen_US
dc.subjectFerroelectric capacitorsen_US
dc.subjectThin film capacitorsen_US
dc.subjectSpin coatingen_US
dc.subjectSol-gel processingen_US
dc.subjectX-ray diffractionen_US
dc.subjectScanning electron microscopyen_US
dc.titleMicrowave characterization of (Pb,La)TiO₃ thin films integrated on ZrO₂/SiO₂/Si wafers by sol-gel techniquesen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage4696-
dc.identifier.epage4698-
dc.identifier.volume85-
dc.identifier.issue20-
dcterms.abstractPolycrystalline perovskite lead lanthanum titanate (PLT) thin films were prepared by a sol-gel method on ZrO₂/SiO₂/Si substrates. The structure of the films was studied by x-ray diffraction and scanning electron microscopy, and the microwave dielectric properties characterized on a network analyzer. A strong dependence of the dielectric constant of PLT films and, correspondingly, the resonance frequency of PLT-based interdigital capacitor on the sample preparation conditions were observed. They resulted from the structural transformation of PLT from a layered structure to a uniform film as the annealing temperature was raised from 550 to 700 °C, suggesting a possible way to modify the device performance by controlling the layered structure of the ferroelectric film.-
dcterms.bibliographicCitationApplied physics letters, 15 Nov. 2004, v. 85, no. 20, p.4696-4698-
dcterms.isPartOfApplied physics letters-
dcterms.issued2004-11-15-
dc.identifier.isiWOS:000225166400046-
dc.identifier.scopus2-s2.0-10944226769-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr21542-
dc.description.ros2004-2005 > Academic research: refereed > Publication in refereed journal-
dc.description.oapublished_final-
Appears in Collections:Journal/Magazine Article
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