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Title: Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric
Authors: Wang, LS
Xu, JP
Liu, L
Lu, HH
Lai, PT
Tang, WM 
Issue Date: 2015
Source: Applied physics letters, 2015, v. 106, no. 12, 123504, p. 123504-1-123504-4
Abstract: InGaAs metal-oxide-semiconductor (MOS) capacitors with composite gate dielectric consisting of Ti-based oxynitride (TiON)/Ta-based oxynitride (TaON) multilayer are fabricated by RF sputtering. The interfacial and electrical properties of the TiON/TaON/InGaAs and TaON/TiON/InGaAs MOS structures are investigated and compared. Experimental results show that the former exhibits lower interface-state density (1.0 x 10(12) cm(-2) eV(-1) at midgap), smaller gate leakage current (9.5 x 10(-5) A/cm(2) at a gate voltage of 2 V), larger equivalent dielectric constant (19.8), and higher reliability under electrical stress than the latter. The involved mechanism lies in the fact that the ultrathin TaON interlayer deposited on the sulfur-passivated InGaAs surface can effectively reduce the defective states and thus unpin the Femi level at the TaON/InGaAs interface, improving the electrical properties of the device.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4916539
Rights: © 2015 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in L. S. Wang et al., Appl. Phys. Lett. 106, 123504 (2015) and may be found at
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