Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/35738
Title: Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric
Authors: Wang, LS
Xu, JP
Liu, L
Lu, HH
Lai, PT
Tang, WM 
Issue Date: 2015
Publisher: American Institute of Physics
Source: Applied physics letters, 2015, v. 106, no. 12, 123504 How to cite?
Journal: Applied physics letters 
Abstract: InGaAs metal-oxide-semiconductor (MOS) capacitors with composite gate dielectric consisting of Ti-based oxynitride (TiON)/Ta-based oxynitride (TaON) multilayer are fabricated by RF sputtering. The interfacial and electrical properties of the TiON/TaON/InGaAs and TaON/TiON/InGaAs MOS structures are investigated and compared. Experimental results show that the former exhibits lower interface-state density (1.0 x 10(12) cm(-2) eV(-1) at midgap), smaller gate leakage current (9.5 x 10(-5) A/cm(2) at a gate voltage of 2 V), larger equivalent dielectric constant (19.8), and higher reliability under electrical stress than the latter. The involved mechanism lies in the fact that the ultrathin TaON interlayer deposited on the sulfur-passivated InGaAs surface can effectively reduce the defective states and thus unpin the Femi level at the TaON/InGaAs interface, improving the electrical properties of the device.
URI: http://hdl.handle.net/10397/35738
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.4916539
Appears in Collections:Journal/Magazine Article

Access
View full-text via PolyU eLinks SFX Query
Show full item record

WEB OF SCIENCETM
Citations

1
Last Week
0
Last month
Citations as of Mar 26, 2017

Page view(s)

17
Last Week
1
Last month
Checked on Mar 26, 2017

Google ScholarTM

Check

Altmetric



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.