Please use this identifier to cite or link to this item:
Title: Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric
Authors: Wang, LS
Xu, JP
Liu, L
Lu, HH
Lai, PT
Tang, WM 
Issue Date: 2015
Publisher: American Institute of Physics
Source: Applied physics letters, 2015, v. 106, no. 12, 123504 How to cite?
Journal: Applied physics letters 
Abstract: InGaAs metal-oxide-semiconductor (MOS) capacitors with composite gate dielectric consisting of Ti-based oxynitride (TiON)/Ta-based oxynitride (TaON) multilayer are fabricated by RF sputtering. The interfacial and electrical properties of the TiON/TaON/InGaAs and TaON/TiON/InGaAs MOS structures are investigated and compared. Experimental results show that the former exhibits lower interface-state density (1.0 x 10(12) cm(-2) eV(-1) at midgap), smaller gate leakage current (9.5 x 10(-5) A/cm(2) at a gate voltage of 2 V), larger equivalent dielectric constant (19.8), and higher reliability under electrical stress than the latter. The involved mechanism lies in the fact that the ultrathin TaON interlayer deposited on the sulfur-passivated InGaAs surface can effectively reduce the defective states and thus unpin the Femi level at the TaON/InGaAs interface, improving the electrical properties of the device.
ISSN: 0003-6951 (print)
1077-3118 (online)
DOI: 10.1063/1.4916539
Appears in Collections:Journal/Magazine Article

View full-text via PolyU eLinks SFX Query
Show full item record


Last Week
Last month
Citations as of Apr 19, 2017

Page view(s)

Last Week
Last month
Checked on Apr 23, 2017

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.