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Title: On the voltage dependence of sensitivity for Schottky-type gas sensor
Authors: Liu, Y
Yu, J
Tang, WM 
Lai, PT
Issue Date: 2014
Source: Applied physics letters, 2014, v. 105, no. 22, 223503, p. 223503-1-223503-4
Abstract: The voltage dependence of sensitivity for Schottky-diode gas sensor is theoretically studied and experimentally verified in this work. The study is based on the forward current-voltage (I-V) characteristics of the device and benefits from its power exponent parameter alpha (V) = [d(ln I)]/[d(ln V)]. This proposed analytical method (1) provides an easier way to identify the current-flow mechanisms at different bias levels, (2) demonstrates the exponential relation between the device sensitivity and the voltage at low bias level, (3) allows easy and accurate calculation of the Schottky barrier-height change, and (4) lays the groundwork for investigating the maximum sensitivity and the corresponding bias voltage. This analytical method is verified by using a Pd/WO3/SiC diode under exposure to hydrogen gas with different concentrations at 150 degrees C and 225 degrees C. Based on the proposed method, the parameters (barrier-height change, maximum sensitivity and corresponding bias voltage) of the sensor can be easily extracted and show excellent consistence with those obtained by conventional method.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4903231
Rights: © 2014 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Y. Liu et al., Appl. Phys. Lett. 105, 223503 (2014) and may be found at
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