Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/35733
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Liu, Y | - |
dc.creator | Yu, J | - |
dc.creator | Tang, WM | - |
dc.creator | Lai, PT | - |
dc.date.accessioned | 2016-04-15T08:35:23Z | - |
dc.date.available | 2016-04-15T08:35:23Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/35733 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2014 AIP Publishing LLC. | en_US |
dc.rights | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Y. Liu et al., Appl. Phys. Lett. 105, 223503 (2014) and may be found at https://dx.doi.org/10.1063/1.4903231 | en_US |
dc.title | On the voltage dependence of sensitivity for Schottky-type gas sensor | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 105 | - |
dc.identifier.issue | 22 | - |
dc.identifier.doi | 10.1063/1.4903231 | - |
dcterms.abstract | The voltage dependence of sensitivity for Schottky-diode gas sensor is theoretically studied and experimentally verified in this work. The study is based on the forward current-voltage (I-V) characteristics of the device and benefits from its power exponent parameter alpha (V) = [d(ln I)]/[d(ln V)]. This proposed analytical method (1) provides an easier way to identify the current-flow mechanisms at different bias levels, (2) demonstrates the exponential relation between the device sensitivity and the voltage at low bias level, (3) allows easy and accurate calculation of the Schottky barrier-height change, and (4) lays the groundwork for investigating the maximum sensitivity and the corresponding bias voltage. This analytical method is verified by using a Pd/WO3/SiC diode under exposure to hydrogen gas with different concentrations at 150 degrees C and 225 degrees C. Based on the proposed method, the parameters (barrier-height change, maximum sensitivity and corresponding bias voltage) of the sensor can be easily extracted and show excellent consistence with those obtained by conventional method. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 2014, v. 105, no. 22, 223503, p. 223503-1-223503-4 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2014 | - |
dc.identifier.isi | WOS:000346265200087 | - |
dc.identifier.scopus | 2-s2.0-84915749064 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | 2014003240 | - |
dc.description.ros | 2014-2015 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Liu_Voltage_Dependence_Schottky-type.pdf | 776.41 kB | Adobe PDF | View/Open |
Page views
115
Last Week
2
2
Last month
Citations as of Apr 14, 2024
Downloads
92
Citations as of Apr 14, 2024
SCOPUSTM
Citations
14
Last Week
0
0
Last month
Citations as of Apr 19, 2024
WEB OF SCIENCETM
Citations
14
Last Week
0
0
Last month
Citations as of Apr 18, 2024
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.