Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/33072
Title: Enhanced Raman scattering from vertical silicon nanowires array
Authors: Huang, JA
Zhao, YQ
Zhang, XJ
Luo, LB
Liu, YK
Zapien, JA
Surya, C 
Lee, ST
Issue Date: 2011
Source: Applied physics letters, 2011, v. 98, no. 18, 183108, p. 183108-1-183108-3
Abstract: We fabricated ordered hexagonal-packed vertical silicon nanowire (SiNW) arrays with varying diameters of 450-900 nm and varying lengths of 0.54-7.3 μm, and studied their Raman enhancement properties. We found the Raman enhancement per unit volume (REV) increased with decreasing wire diameters and oscillated with wire length, and the REV of seven 450-nm-diameter, 3-μm -long SiNWs was about twice that of a single SiNW having the same size. The differences were attributed to the vertical finite-length cylinder structures of the SiNW array, as supported by finite-difference-time-domain simulation results based on the helical resonant surface wave model.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.3584871
Rights: © 2011 American Institute of Physics.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. A. Huang et al., Appl. Phys. Lett. 98, 183108 (2011) and may be found at https://dx.doi.org/10.1063/1.3584871
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