Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/3271
Title: Structural and dielectric properties of epitaxial SrTiO₃films grown directly on GaAs substrates by laser molecular beam epitaxy
Authors: Wu, Z
Huang, W
Wong, KH
Hao, JH 
Keywords: Atomic force microscopy
Crystal orientation
Ferroelectric thin films
Molecular beam epitaxial growth
Permittivity
Reflection high energy electron diffraction
Strontium compounds
Issue Date: 1-Sep-2008
Publisher: American Institute of Physics
Source: Journal of applied physics, 1 Sept. 2008, v. 104, no. 5, 054103, p. 1-3 How to cite?
Journal: Journal of applied physics 
Abstract: Epitaxial SrTiO₃films were grown on GaAs (001) substrates without any buffer layers using laser molecular beam epitaxy technique. The reflection high-energy electron diffraction observations have revealed that a layer-by-layer growth of SrTiO₃was achieved at optimized deposition conditions. The crystalline orientation of the as-grown SrTiO₃(001) films rotates 45° in plane with respect to the GaAs substrates. Atomic force microscope studies show that these films possess atomically flat surfaces. The dielectric properties of the heterostructure were also investigated. Our results have clearly demonstrated the practicality of integrating perovskite oxide thin films with GaAs substrates.
URI: http://hdl.handle.net/10397/3271
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.2974796
Rights: © 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z.P. Wu et al., J. Appl. Phys. 104, 054103 (2008) and may be found at http://jap.aip.org/resource/1/japiau/v104/i5/p054103_s1.
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