Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/3271
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Wu, Z | - |
dc.creator | Huang, W | - |
dc.creator | Wong, KH | - |
dc.creator | Hao, JH | - |
dc.date.accessioned | 2014-12-11T08:23:10Z | - |
dc.date.available | 2014-12-11T08:23:10Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/3271 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z.P. Wu et al., J. Appl. Phys. 104, 054103 (2008) and may be found at http://jap.aip.org/resource/1/japiau/v104/i5/p054103_s1. | en_US |
dc.subject | Atomic force microscopy | en_US |
dc.subject | Crystal orientation | en_US |
dc.subject | Ferroelectric thin films | en_US |
dc.subject | Molecular beam epitaxial growth | en_US |
dc.subject | Permittivity | en_US |
dc.subject | Reflection high energy electron diffraction | en_US |
dc.subject | Strontium compounds | en_US |
dc.title | Structural and dielectric properties of epitaxial SrTiO₃films grown directly on GaAs substrates by laser molecular beam epitaxy | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: Z. P. Wu | en_US |
dc.description.otherinformation | Author name used in this publication: K. H. Wong | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.volume | 104 | - |
dc.identifier.issue | 5 | - |
dc.identifier.doi | 10.1063/1.2974796 | - |
dcterms.abstract | Epitaxial SrTiO₃films were grown on GaAs (001) substrates without any buffer layers using laser molecular beam epitaxy technique. The reflection high-energy electron diffraction observations have revealed that a layer-by-layer growth of SrTiO₃was achieved at optimized deposition conditions. The crystalline orientation of the as-grown SrTiO₃(001) films rotates 45° in plane with respect to the GaAs substrates. Atomic force microscope studies show that these films possess atomically flat surfaces. The dielectric properties of the heterostructure were also investigated. Our results have clearly demonstrated the practicality of integrating perovskite oxide thin films with GaAs substrates. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 1 Sept. 2008, v. 104, no. 5, 054103, p. 1-3 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2008-09-01 | - |
dc.identifier.isi | WOS:000259853600089 | - |
dc.identifier.scopus | 2-s2.0-51849164500 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.rosgroupid | r43441 | - |
dc.description.ros | 2008-2009 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
JApplPhys_104_054103.pdf | 224.7 kB | Adobe PDF | View/Open |
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