Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/31806
Title: High-performance organic thin-film transistor by using LaNbO as gate dielectric
Authors: Han, CY
Song, JQ
Tang, WM 
Leung, CH
Lai, PT
Issue Date: 2015
Source: Applied physics letters, 2015, v. 107, no. 3, 33503, p. 033503-1-033503-5
Abstract: Pentacene organic thin-film transistors (OTFTs) using LaxNb(1-x)Oy as gate dielectric with different La contents (x=0.347, 0.648) have been fabricated and compared with those using Nb oxide or La oxide. The OTFT with La0.648Nb0.352Oy as gate dielectric can achieve a high carrier mobility of 1.14cm2V-1s-1 (about 1000 times and 2 times those of the devices using Nb oxide and La oxide, respectively), and has negligible hysteresis of -0.130V, small sub-threshold swing of 0.280V/dec, and low threshold voltage of -1.35V. AFM and XPS reveal that La can suppress the formation of oxygen vacancies in Nb oxide while Nb can alleviate the hygroscopicity of La oxide, which results in a more passivated and smoother dielectric surface, leading to larger pentacene grains grown and thus higher carrier mobility. The OTFT with Nb oxide has an anticlockwise hysteresis but the device with La oxide shows an opposite direction. This can be explained in terms of donor-like traps due to oxygen vacancies and acceptor-like traps originated from hydroxyl ions formed after La2O3 absorbing water moisture.
Publisher: American Institute of Physics
Journal: Applied physics letters 
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.4927098
Rights: © 2015 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in C. Y. Han et al., Appl. Phys. Lett. 107, 033503 (2015) and may be found at https://dx.doi.org/10.1063/1.4927098
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