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aip.orgtrue10.1063/1.49270982015-07-20High-performance organic thin-film transistor by using LaNbO as gate dielectric
10.1063/1.4927098http://dx.doi.org/10.1063/1.4927098
doi:10.1063/1.4927098High-performance organic thin-film transistor by using LaNbO as gate dielectricC. Y. HanJ. Q. SongW. M. TangC. H. LeungP. T. Laiatomic force microscopycarrier mobilitylanthanum compoundsorganic semiconductorsthin film transistorsvacancies (crystal)X-ray photoelectron spectra
2015-07-20trueaip.org10.1063/1.4927098
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