Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/31213
Title: Use of the ultraviolet absorption spectrum of CF 2 to determine the spatially resolved absolute CF 2 density, rotational temperature, and vibrational distribution in a plasma etching reactor
Authors: Bulcourt, N
Booth, JP
Hudson, EA
Luque, J
Mok, DKW 
Lee, EP
Chau, FT
Dyke, JM
Issue Date: 2004
Source: Journal of chemical physics, 2004, v. 120, no. 20, p. 9499-9508
Abstract: The CF 2 densities in a plasma etch reactor used for industrial wafer processing were determined using broadband ultraviolet absorption spectroscopy. The absorption cross sections of CF 2 at selected wavelengths, used for calculating the number densities from the experimental spectra were determined using Franck Condon factors. The number densities of CF 2 were also determined in different regions of the plasma, including the center of the plasma and outside the plasma volume. The CF 2 rotational temperatures and vibrational energy distributions were also estimated.
Publisher: American Institute of Physics
Journal: Journal of chemical physics 
ISSN: 0021-9606
EISSN: 1089-7690
DOI: 10.1063/1.1695313
Rights: © 2004 American Institute of Physics.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in N. Bulcourt et al., J. Chem. Phys. 120, 9499 (2004) and may be found at https://dx.doi.org/10.1063/1.1695313
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