Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/28355
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Title: Heteroepitaxial growth and multiferroic properties of Mn-doped BiFeO 3 films on SrTiO3 buffered III-V semiconductor GaAs
Authors: Gao, GY
Yang, ZB
Huang, W
Zeng, HZ
Wang, Y 
Chan, HLW 
Wu, WB
Hao, JH 
Issue Date: 2013
Source: Journal of applied physics, 2013, v. 114, no. 9, 94106, p. 094106-1-094106-5
Abstract: Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO (100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2Pr ∼ 92 μC/cm2 and 2EC ∼ 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm3 and coercive field of about 123 Oe is also found in the heterostructure at room temperature.
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.4820579
Rights: © 2013 AIP Publishing LLC.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in G. Y. Gao et al., J. Appl. Phys. 114, 094106 (2013) and may be found at https://dx.doi.org/10.1063/1.4820579
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