Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/28355
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dc.contributorDepartment of Applied Physics-
dc.creatorGao, GY-
dc.creatorYang, ZB-
dc.creatorHuang, W-
dc.creatorZeng, HZ-
dc.creatorWang, Y-
dc.creatorChan, HLW-
dc.creatorWu, WB-
dc.creatorHao, JH-
dc.date.accessioned2014-12-19T07:01:01Z-
dc.date.available2014-12-19T07:01:01Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/28355-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2013 AIP Publishing LLC.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in G. Y. Gao et al., J. Appl. Phys. 114, 094106 (2013) and may be found at https://dx.doi.org/10.1063/1.4820579en_US
dc.titleHeteroepitaxial growth and multiferroic properties of Mn-doped BiFeO 3 films on SrTiO3 buffered III-V semiconductor GaAsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume114-
dc.identifier.issue9-
dc.identifier.doi10.1063/1.4820579-
dcterms.abstractEpitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO (100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2Pr ∼ 92 μC/cm2 and 2EC ∼ 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm3 and coercive field of about 123 Oe is also found in the heterostructure at room temperature.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 2013, v. 114, no. 9, 94106, p. 094106-1-094106-5-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2013-
dc.identifier.scopus2-s2.0-84884934366-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr68070-
dc.description.ros2013-2014 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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