Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/27856
Title: Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy
Authors: Huang, W
Wu, ZP
Hao, JH 
Issue Date: 2009
Publisher: American Institute of Physics
Source: Applied physics letters, 2009, v. 94, no. 3, 32905 How to cite?
Journal: Applied physics letters 
Abstract: Ferroelectric BaTiO3 thin films were epitaxially grown on (001) GaAs substrate using SrTiO3 as a buffer layer by laser molecular beam epitaxy. The perovskite SrTiO3 buffer layer present a body centered cubic structure by formation of an interfacial layer with the [100] SrTiO 3
[110] GaAs in-plane relationship. Thereupon, a highly c -oriented BaTiO3 thin film was grown on SrTiO3 /GaAs in a layer by layer mode. Enhanced electrical properties of the heteroepitaxial structure were demonstrated. The BaTiO3 (150 nm) / SrTiO3 /GaAs system demonstrates hysteresis loops with a remnant polarization of 2.5 μC/ cm2 at 600 kV/cm and a small leakage current density of 2.9× 10-7 A/ cm2 at 200 kV/cm.
URI: http://hdl.handle.net/10397/27856
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.3075955
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