Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2507
Title: Structural and resistance switching properties of ZnO₃/ SrTiO/GaAs heterostructure grown by laser molecular beam epitaxy
Authors: Huang, W
Dai, J 
Hao, JH 
Keywords: Buffer layers
Gallium arsenide
III-V semiconductors
II-VI semiconductors
Molecular beam epitaxial growth
Semiconductor heterojunctions
Strontium compounds
Zinc compounds
Issue Date: 18-Oct-2010
Publisher: American Institute of Physics
Source: Applied physics letters, 18 Oct. 2010, v. 97, no. 16, 162905, p. 1-3 How to cite?
Journal: Applied physics letters 
Abstract: ZnO thin films were epitaxially grown on (001) GaAs substrate by laser molecular beam epitaxy with SrTiO₃(STO) as a buffer layer. The interface properties of ZnO/GaAs heterostructure are greatly improved by inserting STO buffer layer. The interfacial effects on the transport and dielectric characteristics of the heterostructure have been investigated. The current-voltage characteristic of the heterostructure reveals an asymmetric and resistance switching behavior, exhibiting a temperature-dependent resistance hysteresis in the temperature range of 50–300 K. These measured properties could be attributed to the charge effect at the interface of the heterostructure.
URI: http://hdl.handle.net/10397/2507
ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.3505136
Rights: © 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Huang, J. Y. Dai & J. H. Hao, Appl. Phys. Lett. 97, 162905 (2010) and may be found at http://link.aip.org/link/?apl/97/162905
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